a-c
英 [ə siː]
美 [ə siː]
【医】耳颈动脉的，房颈动脉的
双语例句
- For example, type ls [ a-c] to find the files named a, b, and c.
例如，键入ls[a-c]以查找名为a、b或c的文件。 - For example, type ls [ a-c] to find the files named
例如，键入ls[a-c]以查找名为 - Microstructures and Tribological Properties of TiC/ a-C Films Grown by Magnetron Sputtering
磁控溅射TiC/a-C薄膜的结构和摩擦学性能研究 - Preparation of a-C Films Consisted of Nano-graphite Structures by Ion Bombardment Assisted Electron Beam Evaporation Deposition
离子轰击辅助电子束蒸发制备含有纳米石墨结构的非晶碳膜 - Influence of duty ratio on the fabrication of a-C: Hfilm on microshell
占空比对微球a-C：H薄膜制备的影响 - Study on the Hydrophobic Fluorinated Amorphous Carbon ( a-C: F) Film Deposited by DBD-PECVD
DBD-PECVD法制备高疏水性氟碳聚合物（a-C：F）薄膜的研究 - This paper studied the synthesis process conditions of softener A-C, and found their optimum conditions.
本文对柔软剂A-C的合成工艺条件进行了探索和优化。 - Effects of RF-power and temperature on surface morphology and microstructure of a-C ∶ F ∶ H thin films
功率和温度对a-C：F：H膜表面形貌和结构的影响 - A-C: F thin films were prepared by PECVD method under different conditions.
用等离子体增强化学气相沉积（PECVD）法制备了不同工艺条件下的含氟碳膜。 - Study on Structure and Thermal Stability of Low-κ a-C: F Films
低介电常数a-C：F薄膜结构和热稳定性研究 - The a-C: H Films Deposited by PECVD Method
用PECVD法沉积α-C：H薄膜的研究 - Effects of Deposit Parameters and Annealing on Optical Properties of a-C: H Films
制备参数和退火对a－C∶H膜光学性质的影响 - A-C: h/ Si solar cell
a-C∶H/Si太阳电池的研究 - Study on the structure of a c ∶ h ( n) films by XPS
a-C∶H（N）薄膜结构的X射线光电子能谱分析 - A C ∶ H films were fabricated in a plasma enhanced chemical vapor deposition ( PECVD) system by hydrogen dilution method.
在等离子增强气相化学沉积（PECVD）系统中，利用氢稀释方法制备了氢化非晶碳（a-C∶H）薄膜样品。 - The various preparation methods of a-C: H thin films, including plasma deposition, ion beam deposition, sputtering and chemical vapor deposition, were described in detail in this paper.
本文详细介绍了a-C∶H薄膜的各种制备方法，包括等离子体淀积法、离子束法、溅射法和化学汽相淀积法等，给出了某些典型的实验条件。 - In this letter we report the construction, processing and properties of the amorphous-C: H/ Si solar cell.
本文报导了a-C∶H/Si太阳电池的结构、制备方法和已达到的性能。 - The result of FTIR analysis shows that nitrogen doped a-C: F film forms the a-C: F: N film.
FTIR分析结果显示，氮元素有效掺入到了a-C∶F薄膜中形成了a-C∶F∶N薄膜。 - This thesis mainly studies the influence of nitrogen incorporation on the thermal stability of a-C: F film.
本文重点研究了掺氮对氟化非晶碳薄膜热稳定性的影响。 - In this base, the powder samples were characterized by TG-DTA, XRD and TEM, Ionic conductivity of the sintered pellet was studied A-C impedance spectroscopy.
本文还对合成的材料进行了TG-DTA、XRD和TEM的表征，并应用交流复阻抗技术测定了样品的室温电导率。 - Influence of deposition temperature on the structure and thermal stability of a-C: F films
沉积温度对a-C：F薄膜结构与热稳定性的影响 - The dielectric constant of a-C: F films is composed mainly of electron polarization and increases with increasing R.
a-C：F薄膜的介电常数取决于电子极化并随R的增大而上升。 - Nitrogen doping fluorinated amorphous carbon ( a-C: F: N) thin films were prepared by RF-PECVD.
用射频等离子体增强化学气相沉积（RF-PECVD）法制备氮掺杂氟化非晶碳（a-C：F：N）薄膜。 - The Influence of Microwave Power and Annealing Temperature on Structures and Properties of a-C: F, H Films
微波功率和真空退火对a-C：F，H膜结构和性质的影响 - The types A-B, A-C and D-E of the non-reactive copolymeric compatibilizers were described.
阐述了A-B、A-C和D-E型非反应性共聚物增容剂。 - The a-C: H/ a-Se complex films were fabricated on the substrates of KCl and Si, and used for the studies of IR and Raman spectroscopy.
我们在KCl和Si单晶上制备了a-C∶H/a-Se复合膜，以进行红外和喇曼谱分析。 - Prepared were the a-C: F thin films by RF-PECVD. Effects of RF power on depositional rate and microstructure of a-C: F thin films were investigated.
用射频等离子体增强型化学气相沉积法制备了a-C：F薄膜，并研究了射频功率对a-C：F薄膜沉积速率和结构的影响。 - The results indicated that the a-C: H films probably can be used as passivation films of semiconductor devices.
结果表明a-C：H/Si膜有可能用作半导体器件的表面钝化膜。 - Synthesis and Characterization of SiCOF/ a-C ∶ F Double-Layer Films with Low Dielectric Constant for Copper Interconnects~
铜互连中SiCOF/a-C∶F双层低介电常数薄膜的制备和表征（英文） - Effect of RF Power on Depositional Rate and Microstructure of a-C: F Thin Film
射频功率对a-C：F薄膜沉积速率和结构的影响