LDD
英
美
abbr. 激光检波二极管(Laser Detector Diode); 线性延迟失真(Linear Delay Distortion); 载荷的，负荷的
双语例句
- If you look at the output of ldd on a given binary, that shows the libraries that would normally be loaded when running it; all of those are loaded after the libraries listed in LD_PRELOAD.
通过查看给定库的ldd输出可以看到，它显示运行时正常加载的库；所有这些库都在LDPRELOAD列出的库加载之后方才加载。 - Don't forget also to check the system man pages for individual functions like ld, ldd, ipcs, ipcrm and so on.
不要忘记去查看关于ld、ldd、ipcs、ipcrm等各个函数的系统手册页。 - One useful tool for debugging shared library problems is ldd.
ldd是调试共享程序库问题的一个实用工具。 - For the purpose of reducing off-state current, lightly doped drain ( LDD) structures were used in a p-Si TFT LCD.
针对多晶硅薄膜晶体管液晶显示器件关态漏电流较大的问题，采用源漏轻掺杂结构以降低关态时电荷的泄漏，增加晶体管的开关电流比值。 - Design of Digital LDD Ladder High-Pass Filter with Low Sensitivity
低灵敏度数字LDD梯形高通滤波器的设计 - A Fully Depleted Short-Channel SOI LDD/ LDS MOSFET Model for VLSI Circuits Analysis
适于器件及电路分析的全耗尽短沟道LDD／LDSSOIMOSFET器件模型 - Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET's
超薄栅下LDDnMOSFET器件GIDL应力下退化特性 - The results of test show that the breakdown voltage of LDD MOSFET is higher than that of the conventional MOSFET over 3 volts and the short channel effects of the threshold voltage are restrained obviously.
测试结果表明，LDDMOSFET击穿电压高于常规MOSFET3V以上，同时阈值电压的短沟效应明显减小。 - Deep Submicron LDD CMOS Integrated Numerical Model and Ring Oscillator Circuit Transient Simulation
深亚微米LDDCMOS集成数值模型及环振电路的瞬态模拟 - Conclusion: TCM treatment can relieve the clinical symptoms of LDD, but could not affect the structure of the degenerated lumbar disc.
治疗前后椎间盘厚度、MRI信号强度亦无明显差异。结论：中医综合治疗能缓解LDD患者的临床症状，但对退变腰椎间盘的形态不能产生明显影响。 - Numerical Simulation of LDD MOSFET
轻掺杂漏（LDD）MOSFET的数值模拟 - Threshold Voltage of Two-Dimensional Short-Channel SOI-MOSFET/ LDD Devices
二维短沟道SOI&MOSFET/LDD结构的阈值电压 - Method: The blood rheology of LDD and its combination on the rat models with aging and blood stasis was observed, and the mechanism was explored through deformation of red cell, indexes of blood coagulation and platelet aggregation rate.
方法：用复合因素制备衰老加阴虚血瘀动物模型，观察六味地黄汤及其配伍对血液流变性的影响，并通过红细胞变形能力、血凝学指标、血小板聚集等探讨了其作用机理。 - Firstly, this dissertation introduces the concept, makeup and the characteristics of mobile computing, gives the concept of Location Dependent Data ( LDD) and Location Dependent Query ( LDQ) respectively.
本文首先介绍了移动计算的概念、组成和特点，对移动计算环境下的位置相关数据（LDD）和位置相关查询（LDQ）有关的概念进行了总结。 - Simulation and Analysis of Ultra Deep Sub-Micron Asymmetrical Halo LDD Low Power Device
超深亚微米非对称HaloLDD低功耗新器件的研究分析 - Investigation of the Lightly Doped Drain ( LDD) MOSFET Technology
轻掺杂漏（LDD）MOSFET工艺研究 - Finally, the optimal characteristics of LDD structure are got, which are low doping and shallow junction.
最后，得出了LDD区的最佳结构特征应满足的条件是：轻掺杂、浅结； - The article analyses from LDD's characteristics, it explains thought and theory of government economic behavior history.
本文从分析欠发达地区（国家）的特性入手，阐述了经济发展史中有关政府经济行为的思想、理论； - Two-dimensional section structure, profiling of impurity concentration and electrical characteristics of NMOS are gained.
以LDD结构的NMOS器件为例进行了二维工艺仿真，得到了NMOS器件的二维剖面结构、杂质浓度的等值分布描述以及相应的电学特性。 - First, we define location dependent data and location dependent query completely.
论文首先定义了位置相关数据（LDD）和位置相关查询（LDQ）。 - Analyzes the relationships between LDD doping concentration, depth and device characteristics in detail. The device characteristics include channel field, subthreshold slop, etc. Reflects restraint of LDD structure to HCE, while keeping the substrate current as criterion.
详细分析了轻掺杂漏区的浓度和深度与沟道电场和亚阈斜率等器件特性间的关系，并以衬底电流为标准反映了LDD结构对HCE的抑制作用。 - This paper analyses the influence of hot carrier's retrogradation on integrated circuit's reliability, and studies computer simulator technology, quasi-constant voltage theory, MOS transistor of LDD structure for the prevention of hot carrier retrogradation.
分析了热载流子退化现象对集成电路可靠性的影响，研究了改善热载流子退化的计算机工艺模拟技术、按比例缩小的准恒定电压理论、LDD结构MOS晶体管。 - Gate Current Simulation of SOI LDD MOSFET
SOILDDMOSFET的栅电流的模拟 - Surface lateral electric field for LDD MOSFET and its application
LDDMOSFET表面横向电场模型及其应用 - Characterization and Modeling of LDD MOSFET_s
漏轻掺杂MOSFET的特性分析及其解析模型 - The generation of interface traps density in the channel region and in the drain region can be clearly distinguished by using this technique.
采用这种方法可以准确地确定界面陷阱在沟道区与漏区的产生，从而有利于更深入地研究LDD结构器件的退化机制。 - The behaviors of the GIDL stress in LDD NMOSFET are studied.
对LDDnMOSFET中的GIDL应力特性进行了研究。 - The appropriate LDD parameters which may depress the KINK effect are provided based on the simulated results of TCAD tools.
基于TCAD工具的计算结果，给出了合适的LDD参数，使KINK效应的影响降到最低。 - The behaviors of the channel hot electron ( CHE) stress at high temperature in LDD NMOSFET are studied and it is found that there is a linear correlation between SILC degradation and Vth degradation in NMOSFET during CHE stress.
对LDDnMOSFET中的高温沟道热电子应力特性进行了研究，发现高温沟道热载流子应力中SILC的退化和Vth的退化存在线性关系。 - The behaviors of low gate voltage ( LGV) and peak substrate current ( Isub, max) stresses are studied in ultra-short and ultra-thin LDD NMOSFET.
对超短超薄LDDnMOSFET中的低栅压（LGV）和最大衬底电流（Isub，max）应力特性进行了研究。