MOSFET
英
美
abbr. 金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor); 金属氧化物硅场效应晶体管(Metal Oxide Silicon Field Effect Transistor)
复数：mosfets
双语例句
- Detecting of ESD latent damages in MOSFET is an ever existing difficult problem in VLSI technology.
MOSFETESD潜在损伤的有效检测一直是一个难以解决的问题。 - Research on Trench MOSFET for High-Frequent Control Switch
高频控制开关用沟槽MOSFET的研究 - An efficient, self-consistent method of Monte Carlo and Poisson equation is used to simulate the electrical characteristic of deep submicron metal-oxide-semiconductor field effect Transistor ( MOSFET).
用蒙特卡罗-泊松方程自洽求解的方法，对深亚微米金属-氧化物-半导体场效应晶体管&MOSFET的电特性进行了模拟。 - The impact of gate-leakage current on device characteristic becomes obvious with the continuous scaling of MOSFETs.
随着MOSFET尺寸的不断减小，栅漏电流对器件特性的影响日益明显。 - High voltage, high current N-channel MOSFETs have been applied to numerous high power designs.
高电压，大电流N沟道MOSFET越来越广泛地应用于大功率的电力电子设备中。 - Power VITM generation gate charge, high voltage N-Channel enhancement mode power MOSFETs.
电力VITM一代的栅极电荷，高电压N沟道增强型功率MOSFET。 - Stress-induction EMF effects and associated principle of magnetic moment deflection for steel tube power MOSFET gate drive circuit
钢管应力-感应电动势效应及其磁矩偏转原理功率场效应晶体管栅极驱动电路 - Study of Power MOSFET Application in the High-power Electronic Switch
功率MOSFET在大功率电子开关中的应用研究 - High Voltage MOSFET ns Grade Edge Pulse Generator Study
高压场效应管纳秒级双快沿脉冲源研究 - The threshold voltage of SiC Schottky barrier source/ drain MOSFET
SiC肖特基源漏MOSFET的阈值电压 - The clamping snubber circuit was set to the rated breakdown voltage of the MOSFET ( 600 V and800 V respectively).
钳位缓冲电路被设定在场效应晶体管的额定击穿电压上（分别为600伏特和800伏特）。 - Using MOSFET inverter technology, Simple circuit small size, light weight, high efficiency and energy saving.
采用MOSFET逆变技术，电路简易，体积小，重量轻，高效节能。 - Analysis of 2-D Short-Channel MOSFET Threshold Voltages Model
二维短沟道MOSFET阈值电压分析模型 - A Short-circuit Protection Method based on Detection of Power MOSFET Turn-on Voltage Drop
基于功率MOSFET导通压降的短路保护方法 - Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET
6H-SiC埋沟MOSFET的C-V解析模型研究 - Development of Trench MOSFET short channel fet
沟槽型MOSFET的发展（英文）短沟道场效应晶体管 - Analysis and Research of Electrical Characteristics Simulation of MOSFET Based on ISE
基于ISE的MOSFET器件电学特性模拟分析与研究 - MOSFET RF Modeling Based on PSP
基于PSP的MOSFET射频建模 - This increase of the reflected voltage results in a higher drain-source voltage blocking MOSFET and longer duty cycles.
增加的反射电压导致使用更高漏源极击穿电压的场效应晶体管和更大的开关占空比。 - This invention discloses a trenched metal oxide semiconductor field effect transistor ( MOSFET) cell.
场效应晶体管以及制造场效应晶体管的方法。 - Research on Power MOSFET Module Based Drive Circuit and Its Implementation
基于功率MOSFET模块驱动电路的研究与实现 - In a hard switching mode the turning on of the MOSFET is not synchronized with the drain-source voltage value.
在硬开关里场效应晶体管的开启波形拐点并不和漏源极电压值同步。 - The article introduces the performance and application of the SKAI automobile power system with low-voltage MOSFET or high-voltage IGBT power component.
本文介绍了带有低压MOSFET或高压IGBT功率器件的SKAI汽车动力系统的性能和应用。 - For example, the peak at20 MHz in the spectrum is caused by the parasitic oscillation due to the output capacitance of the MOSFET and the leakage inductance of the transformer.
举例说明，20兆赫兹的峰点是钳位过程结束后主要由场效应晶体管输出电容和变压器漏感引起的寄生振荡产生的。 - In this paper, we mainly study on a kind of high-voltage pulser with low jitter, wide pulse width and fast front and back pulse edge, which is based on high-voltage power MOSFET.
本文着重研究基于高压场效应管的低晃动、宽脉宽、快前沿及快后沿的高压快脉冲源。 - Research on Calibration Device for on-load Tap-changer Tester Based on Power MOSFET
基于功率型场效应管的有载分接开关测试仪校验装置的研制 - Study for solid-state high-frequency induction heating power source of time-sharing control MOSFET
分时控制MOSFET固态高频感应加热电源研究 - Analysis of the Nano MOSFET Parasitic Resistances Model
纳米MOSFET寄生电阻模型分析 - Bootstrap Capacitor Design to Drive High Voltage Floating MOSFET
驱动高压浮动MOSFET的自举电容设计 - Power MOSFET gate drive circuit
功率场效应晶体管栅极驱动电路