The threshold voltage of SiC Schottky barrier source/ drain MOSFET SiC肖特基源漏MOSFET的阈值电压
Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin. 使用肖特基二极管D1和D2,而不是普通二极管,为的是减少总线上低状态电压,改进噪声极限。
As an example, Schottky barrier diode characteristics is simulated using this method. Study on the Characteristics of Electric Contact between Pantograph and Overhead Contact Line 以肖特基势垒二极管为例,应用该方法,实现了高接触势垒情形下的正反向电流模拟。受电弓&接触网系统电接触特性研究
Electrical characteristics of Pt-ZnO Schottky nano-contact Pt-ZnO纳米肖特基接触的电学特性
The V30200C offers several advantages over planar Schottky rectifiers. V30200C具有比平面肖特基整流器更出色的多种优势。
Life Prediction of Power Schottky Barrier Diode Based on the Method of Parameter Degeneration 基于参数退化法评价功率肖特基二极管寿命
Enhancement type schottky barrier fet 增强型肖特基势垒场效应晶体管
A new ultra-wideband ( UWB) Gaussian pulse generator composed of a step recovery diode ( SRD), a field-effect transistor ( FET) and a Schottky diode was developed. 设计了一种超宽带高斯脉冲的脉冲发生器,此脉冲发生器主要由阶跃恢复二极管,FET管和肖特基二极管组成。
Abnormal Breakdown Diagram of the Schottky Barrier Diodes 肖特基二极管异常击穿特性曲线的研究
Control of Epitaxial Layer Transition Region on Heavy As-Doped Substrate for Schottky Devices 肖特基器件用重掺As衬底上外延层过渡区控制
Investigation on Materials Growth and Device Fabrication of Schottky Barrier Diodes 肖特基二极管相关材料生长及器件研究
Schottky diodes are incorporated in inputs and outputs to clamp undershoot ( see Figure 16). 肖特基二极管一起对输入和输出负过冲进行箝位(参见图16)。
Self aligned schottky fet 自对准肖特基栅场效应晶体管
The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors Abnormal Breakdown Diagram of the Schottky Barrier Diodes 多晶铁电半导体晶界处的肖特基势垒肖特基二极管异常击穿特性曲线的研究
One type is the Schottky defect in ionic crystals. 在离子晶体中有一类是斯考特库缺陷。
Last we present two new pre-distortion, a pre-distortion using twice mixing operation and linearizer using anti – parallel Schottky diodes which are directly connected with PA. 最后研究了两种新型的预失真器:二次混频预失真器和直接级联反向并联肖特基二极管对预失真器,并对后者进行了一定的改进。
Superlow power schottky ttl 超低功率肖特基晶体管晶体管逻辑
Finally, wire bonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design. 最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。
Enhancement depletion mos depletion metal schottky fet 增强型耗尽型模式金属氧化物半导体耗尽型肖特基场效应晶体管
Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design 结构参数对GaN肖特基紫外探测器性能的影响及器件设计
Anti-irradiation characteristics of Pt/ HgInTe Schottky infrared detectors Pt/HgInTe肖特基红外探测器的抗辐照特性
Other features include integrated Schottky diodes, accurate LED current matching and multiple output capability. 其它功能包括集成肖特基二极管、精确的LED电流匹配以及多输出能力。
Current Transport of GaN Schottky UV Detectors GaN肖特基紫外探测器的电流输运研究