antimonide
英
美
n. 锑化物（类）
双语例句
- MOCVD Growth of Antimonide Semiconductors and Simulation of Antimonide-based Thermophotovoltaic Devices
锑化物半导体材料的MOCVD生长研究及其热光伏器件的模拟分析 - A Indium Antimonide IR-photoelectric Sensor Enhanced by Magnetoresistance
磁阻效应增强型锑化铟红外光电传感器 - The chemical etch of GaSb based materials has been studied and the etching process have been optimized. A new modified neutralized ( NH4) 2S solution for antimonide have been proposed, the better passivation effect was obtained than traditional alkali solution.
研究了GaSb材料的腐蚀机理并改进了腐蚀工艺，针对锑化物材料体系的特点，首次发展了中性（NH4）2S钝化溶液，比传统的碱性溶液取得了更好的钝化效果。 - Recombination processes of carriers in indium antimonide
锑化铟中载流子的复合过程 - Velocity of Motion of a-Dislocations in Indium Antimonide
锑化铟单晶中α位错的运动速度 - Conductivity Hall effect and transverse magnetoresistance effect of N type indium antimonide
N型锑化铟的电导率，霍尔效应和横向磁阻效应 - Heat treatment of indium antimonide
锑化铟的热处理 - An energy band model amorphous semiconductor is presented for alkali metal antimonide photocathode, which is different from previous crystalline model.
本文从迁移率涉及的单晶理论的局限出发，对碱锑型光电阴极建立了类似于非晶半导体的能带结构模型。 - Wet chemical reaction kinetics and characteristics of ultrafine antimonide oxide/ kaolin composite powder
氧化锑/高岭土复合阻燃微粉的湿化学反应动力学及特性 - Studies on Wet Chemical Synthesis of Y_2O_3 Stabilized ZrO_2 Wet chemical reaction kinetics and characteristics of ultrafine antimonide oxide/ kaolin composite powder
Y2O3稳定的ZrO2氧离子导体的湿化学合成氧化锑/高岭土复合阻燃微粉的湿化学反应动力学及特性 - Investigation of Devices and Physics for Antimonide Lasers and Photodiodes in Mid-infrared
中红外波段锑化物激光器、探测器器件与物理研究 - Polycrystalline Properties of Multialkali Antimonide Photocathodes
多碱光电阴极的多晶特性 - The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments.
本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法，并通过大量的实验证实了这种方法的可行性。 - The noise of the p-type indium antimonide
p型锑化铟中的噪声 - The mechanical damage of indium antimonide
乙酰丙酮铟的制备锑化铟的机械损伤 - To meet the needs of high electron current density photocathodes, the processes for preparing cesium antimonide have been studied.
为满足大电流密度电子发射的需要，对锑铯光电阴极的制备工艺进行了研究。 - Study on MBE Growth and Physics of Antimonide Laser and Detector Materials
锑化物激光器、探测器MBE生长与物理研究 - Predicted performance of indium antimonide focal plane arrays
锑化铟焦平面阵列的性能预测 - A Technique for Fabricating High-sensitivity Thick Tri-alkali Antimonide Photocathode
高灵敏度厚三碱光电阴极的制备 - X-ray measurement of the thermal expansion of germanium, silicon, indium antimonide and gallium arsenide
锗、硅、锑化铟和砷化镓的热膨涨&用X射线衍射法测量 - Effect of chemical etch on the surface of indium antimonide
化学腐蚀对锑化铟表面的影响 - Moreover, its feasibility has been verified by chemical equilibrium calculation. THE MECHANICAL DAMAGE OF INDIUM ANTIMONIDE
平衡计算证明了硫化沉淀分离铟、锡的可行性。锑化铟的机械损伤 - Finally, this paper also presents a design of gyroelectric PhC structure with indium antimonide ( InSb) dielectric which supports one-way edge mode operating at terahertz frequencies, and the characteristics of terahertz one-way edge mode are carefully analyzed.
最后，本论文设计了一种基于锑化铟（InSb）材料工作在太赫兹波段的支持单向边界模式的旋电光子晶体结构，并分析了这种太赫兹单向边界模的传输特性。 - There are several ways to obtain infrared light. Antimonide semiconductor laser emit mid-infrared spectrum. The most popular way to get the mid-infrared light is using antimonide as emitting active region, at present.
获得红外光的方式有多种，而目前研究最为热门的是以锑化物做半导体激光器发光有源区的方式。 - From this point of view, in this Ph.D dissertation, the thermal behaviors of 2 μ m band antimonide MQW lasers and mid-infrared quantum cascade lasers are studied by using numerical approach.
此博士学位论文主要利用数值分析方法对2μm波段锑化物多量子阱激光器和中红外量子级联激光器的热特性进行了深入的分析。 - In the thesis we have antimonide materials prepared 2 μ m InGaAsSb/ AlGaAsSb bipolar cascade laser, combined with the tunnel junction optical, electrical and other characteristics of the analysis.
本论文利用锑化物材料制备了2μmInGaAssb/AlGaAsSb双极级联激光器，结合隧道结的光学、电学等特性的分析。 - Infrared radiation measuring instrument uses infrared indium antimonide ( InSb) detector to achieve the measurement.
红外辐照度测量仪采用红外锑化铟（InSb）探测器来实现。