arsenide

1. Photo-Ionization Effects in High Gain Gallium Arsenide Photoconductive Semiconductor Switches
   高增益砷化镓光导开关中的光致电离效应
2. Gallium arsenide ultrared lighting transistor a purple variety of the ruby spinel.
   砷化镓红外发光晶体管一种紫色的红尖晶石。
3. Gallium arsenide injection laser
   砷化镓注入式激光器
4. A gray mineral consisting of cobalt arsenide and nickel; an important source of cobalt and nickel.
   一种灰色矿物，由砷化钴和镍组成，是钴和镍的重要来源。
5. First-aid experience for acute hydrogen arsenide poisoning in decayed fish porter patients
   腐鱼搬运工急性砷化氢中毒的救治体会
6. Many sulphides, selenides, and tellurides have the nickel arsenide's NiAs type of structure.
   许多硫化物，硒化物和碲化物具有砷化镍NiAs型的结构。
7. They hope to extend their life further by using silicon or carbon, the atomic nuclei of which interfere less with the entangled electrons than do those of gallium arsenide.
   他们希望可以通过使用硅或碳量子阱来进一步提高寿命，因为与砷化镓相比，这两种元素的原子核与缠结电子之间干扰较小。
8. The elemental form is used to form alloys of metals ( especially lead), and certain semiconductors are made from crystals of gallium arsenide ( GaAs).
   砷通常被用于制造金属合金（特别是铅）和半导体（从镓砷化物的结晶体制得）。
9. Luxtera's design eliminates the need to use expensive group III – V compounds, such as gallium arsenide ( GaAs) and indium phosphate ( InP), in the semiconductors.
   Luxtera的设计消除了使用昂贵的III-V化合物半导体材料（如砷化镓和磷化铟）的必要。
10. Preparation of a high purity gallium arsenide monocrystal by doping with trace tin and its heat treatment
    反掺锡高纯度砷化镓单晶的制备及热处理
11. Ga al as semiconductor laser gallium arsenide injection laser
    镓铝砷半导体激光器砷化镓注入式激光器
12. Analysis of Urine Arsenic Metabolites of People with Skin Lesion Caused by High Arsenide Exposure
    高砷暴露致皮肤损伤人群尿砷代谢产物分析
13. Due to its toxicity and extensive application, arsenide has already caused serious pollution to the environment, especially to the aqueous environment.
    由于砷化物具有较大毒性并且目前应用广泛，它对环境特别是水环境造成的污染已较为严重。
14. Gallium arsenide switches ten times faster than silicon All of a sudden, I've got a clock speed ten times faster with no change in design.
    砷化镓启动的速度是硅的10倍，突然，我得到了10倍快的时钟速度，但是设计没有发生任何改变。
15. Study on the cell structure in semi-insulation gallium arsenide
    用x射线形貌研究半绝缘砷化镓单晶胞状结构
16. Photoluminescence Study on Annealing Behavior of n-Type Gallium Arsenide Irradiated with Neutrons
    中子辐照n型砷化镓退火特性的光致发光研究
17. An automatic system for the measurement of two-dimensional distribution of resistivity of semi-insulating gallium arsenide wafer with three electrode guard method is presented in this paper. In actual application, the fluctuation of temperature and abnormal data obtained would influence the results of the measurement seriously.
    本文介绍了三电极保护法半绝缘砷化镓材料电阻率二维分布自动测量系统，在实际应用中，温度波动、异常数据对测量结果产生严重影响，为此我们提出了一些措施。
18. A method for determination of trace arsenic in smelt antimony by hydrogen arsenide generation-ion chromatography Was proposed.
    本文建立了砷化氢发生&离子色谱法测定炼锑中微量砷的方法。
19. Gallium oxide was prepared from gallium arsenide scraps through a series of steps such as leaching, purifying, neutralization, precipitation and calcination.
    通过浸取、除杂、中和沉淀、煅烧等工艺对砷化镓废渣制备氧化镓进行了试验研究，并确定了较佳的工艺条件。
20. Photoelectron spectroscopy for valence band of silver and gold films on gallium arsenide
    砷化镓上银和金膜的价带光电子谱
21. Determination of Trace Arsenic in Smelt Antimony by Hydrogen Arsenide Generation-Ion Chromatography
    砷化氢发生-离子色谱法测定炼锑中微量砷
22. Crystal Defects in Semi-Insulation Gallium Arsenide
    半绝缘砷化镓单晶中的晶体缺陷
23. The transient study on gallium arsenide photoconductive switches
    砷化镓光电导开关瞬态特性研究
24. X-ray measurement of the thermal expansion of germanium, silicon, indium antimonide and gallium arsenide
    锗、硅、锑化铟和砷化镓的热膨涨&用X射线衍射法测量
25. Average Conductivity of Complementary-Error and Gaussian Doped Layers in Gallium Arsenide
    砷化镓中余误差和高斯掺杂层的平均电导
26. With the development of semiconductor industry, semiconductor ceramic material such as single silicon, gallium arsenide and silicon carbide, etc, is extensive used in this field.
    随着半导体工业的飞速发展，单晶硅、砷化镓和碳化硅等半导体陶瓷材料在此领域得到广泛应用。
27. Gallium arsenide is one of the most important and most widely used semiconductor materials.
    砷化镓是化合物半导体中最重要、用途最广泛的半导体材料之一。
28. This thesis have done the experimental study of single electron charge and spin in very low temperature for the semiconductor gallium arsenide gate electronically controlled quantum dot devices in the international forefront of research areas.
    本论文就是在此国际前沿研究领域中，针对半导体砷化镓栅极电控量子点器件进行了极低温下单电子电荷和自旋测量的实验研究。
29. Single crystal gallium arsenide is a new semiconductor material has developed after germanium and silicon.
    单晶砷化镓材料是继锗、单晶硅之后发展起来的新一代半导体材料。

noun

1. a compound of arsenic with a more positive element