The effect of incomplete ionization of impurity on C-V characteristics of p-type 6H-SiC MOS is researched based on Charge-Sheet model for SiC MOS inversion layers. 从碳化硅材料的晶体结构出发分析了碳化硅材料中杂质的不完全离化,采用SiCMOS反型层薄层电荷数值模型,研究了杂质不完全离化对p型6H-SiCMOSC-V特性的影响。
The Poisson equation is solved using this method for the first time. In particular, the depletion approximation and charge-sheet model in the Poisson equation are avoided due to their invalidity in nano-scaled MOSFETs. 由于在纳米MOSFETs中,常用的耗尽近似和页面电荷模型(charge-sheetmodel)不再适用,导致泊松方程由线性变成非线性形式。