Although he is best known for that, he is proud of having the world's largest collection of Japanese Meiji art and of his collections of Spanish Damascene and antique Swedish textiles. 尽管他因此闻名天下,但让他引以为豪的,却是他那数量位居全球之冠的日本明治时期艺术品收藏,以及他的西班牙金属嵌制艺术品和瑞典古代纺织品收藏。
In this paper, we propose the investigation of the void in dual damascene process and the hole and trench with large aspect ratios between width and height. 本论文主要针对双层镶嵌制程所造成的孔隙及具有高深宽比的极窄和极深的通孔和沟槽所造成的影响加以探讨及研究。
This would approach the opinion of the Damascene concerning the holiness of the active conception. 这将接近舆论对大马士革关于成圣的积极构想。
This truly is a Damascene conversion. 这确实是一次质的转变。
In yet another embodiment, metal layer ( 16) is a damascene copper layer. 然而,在另一个实施例中,金属层(16)是镶嵌铜层。
The traditional Al metallization could not meet the requirements for the development of interconnect technology. Developing damascene Cu metallization has become the main trend recently for the interconnect technology. 传统的Al金属互连技术已经不能满足现代互连技术发展的需要,大马士革结构的Cu金属互连技术已成为互连技术的重点发展方向之一。
Thermal stability of a-C: F: H film better than 400, which is designed in damascene process, should be required except for its low dielectric constant ( s < 3). a-C:F:H薄膜除了有较低的介电常数(占<3)外,其热稳定温度还需要达到平面工艺的温度要求(400℃)。为此,我们进行了氮气气氛中a-C:F:H薄膜热退火的研究。
Copper Dual Damascene processing for chip metallization, and C4 ( Flip-chip) technologies of planar array chip packaging interconnection cause the electrochemical technologies place in the most complication processing for chip fabrication processing. Cu芯片金属化的双大马士革处理和面阵列芯片封装互连的C4(倒装)技术使电化学技术置于最复杂的制造工艺技术之间。
The Study of FSG Etching in Non-Stop Layer Dual Damascene Structure 无中间层双大马士革中FSG刻蚀技术研究
In this paper, the Damascene Cu interconnecting integration technology, low-k dielectric materials and barrier materials in Cu interconnecting integration technology are introduced. 论述了铜互连技术中低k介质材料、势垒层材料以及铜互连布线的大马士革工艺。
The results indicate the stress of copper interconnects generates in the metallization and the thermal stress caused by thermal mismatch during the Damascene process is the main stress. 对测量结果的分析得出金属薄膜的淀积是造成铜互连线中应力的主要原因,热应力在铜互连线应力中占较大比例,热处理后铜互连线中应力减小。