electromigration
英
美
n. 电（迁）移
双语例句
- Electromigration Induced Brittle Creep Fracture Behavior of Lead-Free Solder Micro-Interconnections
电迁移致无铅钎料微互连焊点的脆性蠕变断裂行为 - As an electric current passes through, the Joule heating and electromigration effects occur in the flip chip solder bumps.
当电流通过焊点时，会伴随产生焦耳热效应和电迁移效应。 - Research of Electromigration Simulation Algorithm with Considering Multiple Migration Mechanisms and Sensitivity Analysis
考虑多种迁移机制的电迁移仿真算法研究及灵敏度分析 - The different temperature generates the difference of atomic fluxes and IMCs growth rates at the cathode, which also causes the nonuniform electromigration degree in different solder joints.
不同焊点的温度差异引起了阴极界面的原子净流量和IMC的生长速率差异，导致不同焊点的电迁移程度差异。 - A novel structure has been designed and applied in metallization system of microwave power device, in which backflow effect is taken to increase the electromigration resistance.
在回流动力学理论和实验研究的基础上，将回流加固结构应用于实际微波功率器件。 - In electromigration, the expressions to atomic flux and Ni-Sn IMC growth rate have been derived from the phenomenological equations.
根据唯象方程，推导出试验条件下阴极和阳极扩散反应区的不同原子净流量和界面IMC的生长速率表达式。 - Investigation of Electromigration on Lead-Free Solder Bump in Flip Chip Packaging
倒装芯片技术中无铅凸点电迁移研究 - Parameter and Trend Analysis on Electromigration Acceleration Model
电迁移加速测试模型参数分析及其趋势研究 - The Evaluation on Electromigration Reliability of Copper Interconnect Structures with Extension
具有冗余设计的铜互连线电迁移可靠性评估 - Statistical Comparisons on Parameter Estimations in Electromigration Tests
电迁移测试中模型参数估计方法的比较 - Electromigration is the movement of metal atoms in the direction of current flow.
电迁移是金属原子沿着电流方向的移动。 - Linewidths of Cu interconnects, as well as the anneal processes of Al and Cu interconnects impacting on the microstructures and causing the electromigration failure were analyzed.
分析了Cu互连线线宽，及Al和Cu互连线退火工艺对互连线显微结构及电徙动失效的影响。 - Electromigration phenomenon in tungsten
钨中的电迁移现象 - A key problem in chip fabrication is that the new polish method for electromigration and ultra-low K dielectric and Cu electroplating level.
电迁移问题和集成超低k电介质材料与Cu镀层的新抛光方法是芯片制造中的一个关键问题。 - Therefore, the reasons and the influencing factors of IR-drop and electromigration are discussed firstly.
针对这个问题，本文首先介绍了IR压降和电迁移现象的产生原因及其影响因素。 - Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.
金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。 - Electromigration of IC interconnects are studied. The new model of IC interconnects electromigration related to the IC missing material defect is developed. The simulation results indicate that the IC defects have great effect on the IC interconnects electromigration.
最后，对集成电路互连的电迁徙问题进行了研究，建立了与丢失物缺陷有关的IC互连线的电迁徙模型，模拟结果表明，缺陷对集成电路互连的电迁徙特性有着显著的影响。 - In many issues of the reliability of copper interconnection, we place the emphasis on electromigration and stress migration.
在铜互连可靠性的几个主要问题中，重点针对互连中的电迁徙和应力迁徙进行了探讨。 - Structure of Al-Cu Thin Films and Effect of Electromigration
Al－Cu薄膜结构对电子迁移的影响 - Two main methods, accelerated lifetime test and drift velocity test, to study electromigration are described.
介绍了研究集成电路互连线电迁移的两种方法：加速寿命试验和移动速度试验。 - The non-gaussian noise were found in the electromigration experiment phase.
实验发现电迁移过程的某些阶段噪声信号具有非高斯性。 - And finally, the drift velocity test is dealt with in detail, and its application to the study of electromigration in IC interconnects is described.
详细介绍了移动速度试验，指出了其在互连线电迁移研究中的应用。 - The acceleration life test of electromigration of Al-Si ( 1%) interconnections is presented.
本文介绍了用测试结构做的Al－Si（1%）互连线的电迁移加速寿命试验。 - EBSD analysis of the microstructure of al interconnects and their electromigration reliability
Al互连线微结构的EBSD分析与电徙动可靠性 - Research and Development of the Cu Interconnect and Its Electromigration Failure
铜互连电迁移失效的研究与进展 - Electromigration Dependence on Temperature in VLSI Metallization
VLSI金属化布线电徙动动力学温度相关性研究 - Resistance is the traditional token parameter of electromigration;
电阻是金属互连电迁移传统表征参量。 - Multi-physics coupling simulation method of electromigration is established.
本文建立了多物理场耦合的电迁移失效模拟方法。 - We present a prognostic circuit of electromigration failure mechanism which includes a stress circuit and a measurement circuit.
针对电迁移失效机理的预警电路，从原理上分为两个部分：应力电路和测试电路。 - Electromigration of solder joint is becoming one of the key factors of the reliability of electronic packaging.
焊点中的电迁移是影响电子封装可靠性的关键因素之一。