epitaxy

1. Based on this study, this paper gives a formulator of epitaxy delta connection, draws the diagram of every voltage vector of the24-pulse system.
   分析了24脉波整流各相序的电压矢量图，画出了24脉波的输出波形图。
2. The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.
   再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。
3. I will discuss how Molecular Beam Epitaxy ( MBE) was invented, its current status, and future developments.
   我将介绍分子束磊晶技术（MBE）的发明经过、现况、和将来的发展。
4. Combining the intension and epitaxy of the literacy concept of information, the author puts forward the important meaning of training university student's information literacy of contemporary normal school and which way to go.
   结合信息素养概念的内涵及其外延，提出了培养当代师范大学生信息素养的重要意义及途径。
5. Investigation of Thermally Induced Microdefects in 300 mm Heavily Boron Doped Si Substrates Used for Epitaxy
   外延用300mm重掺BSi衬底中热致微缺陷研究
6. Magnetic and electrical properties of Fe_3O_4 thin films on MgO ( 100) substrates by laser molecular beam epitaxy
   Fe3O4/MgO（100）薄膜的激光分子束外延与磁电学性能
7. Over-expanding connotation and ambiguous epitaxy are the main problems of Chinese medical history and literature science.
   中医医史文献学科目前存在内涵过大，外延不明确；
8. A Study on Surveying Accuracy of Estimation in Multi-Beam Sounding System; Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement
   多波束条带测深系统测深精度评估方法研究用PL谱评测多量子阱红外探测器外延材料
9. Droplet epitaxy is a new MBE growth method for semiconductor materials, but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now.
   液滴外延生长半导体材料是一种较为新颖的MBE生长技术，而图形衬底对液滴外延的影响到目前为止并没有非常详细的研究结果。
10. Mid-infrared photoluminescence of PbSe/ PbSrSe multiple quantum wells grown by molecular beam epitaxy
    MBE生长PbSe/PbSrSe量子阱结构的光致中红外发光的研究
11. By simulation and measurement result, sub-micro grating can destroy waveguide mode of GaN epitaxy structure, let light extract from inside of structure.
    经由模拟及量测结果，次微米光栅可以破坏氮化镓结构内的光波导模态（waveguidemode），使结构内部的光经由次微米光栅萃取出来。
12. Study of Structure and Optical Characteristics of GaAs/ GaN Grown by Molecular Beam Epitaxy
    MBE生长GaAs/GaN薄膜结构与光学特性研究
13. Epitaxy: Concerns/ constraints-lattice-matched systems; strained layers ( pseudomorphic)-limits of thickness; impact of strain on bands, properties.
    磊晶：关键与限制-晶格匹配之材料系统；应变层（晶）-厚度上限；应力对能带的影响，特性。
14. Single Crystal, Substrate, Optico-Electronics, Film, Epitaxy.
    单晶，衬底，光电子，薄膜，外延。
15. The higher value is comparable to those obtained in CVD epitaxy.
    这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
16. The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
    利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
17. Effect of nitridation on the properties of hydride vapor phase epitaxy ( HVPE) grown GaN films was studied.
    研究了衬底氮化过程对于氢化物气相外延（HVPE）方法生长的GaN膜性质的影响。
18. Molecular Beam Epitaxy System and the Growth of GaAs Single Crystal Films
    分子束外延设备和砷化镓单晶的生长
19. Al/ GaAs ( 100) schottky barrier contact has been grown by molecular beam epitaxy ( MBE).
    利用分子束外延（MBE）设备生长了AI/GaAs（100）肖特基结。
20. The hetero epitaxial growth of GaSb on GaAs substrates by molecular beam epitaxy ( MBE) was investigated.
    研究了用分子束外延（MBE）在GaAs衬底上生长GaSb薄膜的工艺。
21. GaAs/ InGaAs quantum dots grown by molecular beam epitaxy ( MBE) were studied.
    运用透射电子显微术（TEM）对由分子束外延（MBE）制备的GaAsInGaAs多层量子点样品进行观察和分析。
22. Modified MBE techniques ate presented such as migration-enhanced epitaxy ( MEE), interval growth and temperature switch.
    介绍了迁移增强外延（MEE）、间隔生长和温度开关等改进的MBE技术。
23. The effects of the AIN thin layer on high quality ZnO thin film epitaxy have been discussed.
    最后，本文也讨论了AIN薄层在高质量ZnO薄膜外延中所起的作用。
24. Chemical beam epitaxy ( CBE), a novel technique for thin-film crystal growth, is introduced.
    本文介绍了薄膜晶体生长的最新技术&化学束外延（CBE）。
25. Deposition of bismuth telluride thin film by electrochemical atomic epitaxy ( ECALE) was firstly reported in this paper.
    本文首次研究了电化学原子层外延（ECALE）法室温沉积碲化铋纳米薄膜的过程。ECALE是原子层外延的电化学模拟。
26. The design and technical points of a molecular beam epitaxy apparatus with metal-organic source were described.
    本文报道了金属有机源分子束外延设备的设计方案和技术特点。
27. Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale.
    用激光分子束外延，原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。
28. The growth of single crystal AlN films by metal organic vapor phase epitaxy.
    单晶AlN薄膜的金属有机气相外延生长研究。
29. The vertical breakdown voltage is low as applying thin epitaxy layer or SOI substrate in LDMOS.
    对于应用于薄外延硅层和SOI基的LDMOS，纵向耐压低是这类器件应用的主要问题。
30. Firstly, the theory and fabrication of molecular beam epitaxy ( MBE) are described in detail.
    本文首先详细介绍了分子束外延设备的原理和构造。

noun

1. growing a crystal layer of one mineral on the crystal base of another mineral in such a manner that its crystalline orientation is the same as that of the substrate