etcher

1. Parallel plate plasma etcher
   平行板等离子体腐蚀装置
2. ( of an electronic device) equipped with transistors. magnetron ion etcher
   （指电子装置）装有晶体管。磁控管离子腐蚀装置
3. Gas flow distribution of reaction chamber of inductively coupled plasma ( ICP) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity.
   感应耦合等离子体（ICP）刻蚀机反应腔室的气流分布是影响等离子体分布与刻蚀工艺均匀性的重要原因之一。
4. Gas Flow Simulation Research on Reaction Chamber of ICP Etcher
   ICP刻蚀机反应腔室气流仿真研究
5. Grain size analysis and refrigeration etcher transmission electron microscope technique show that the medium mixed layer is a structure in which the surfactant like micella, microemulsion, emulsion exist simultaneously and microemulsion occupies the main position.
   粒度分析和冷冻蚀刻透射电镜技术表明，中间混合层为胶束、微乳液、乳状液等表面活性剂聚集体共存的结构，其中微乳液结构占主要地位。
6. Influence of Process Parameters on the Etching Rate in Inductively Coupled Plasma Etcher
   等离子体刻蚀中工艺参数对刻蚀速率影响的研究
7. In silicon deep reactive ion etching ( DRIE) using inductively coupled plasma ( ICP) etcher, a narrow trench with a width of several micrometers usually shows positively tapered profile, which means that the width of the etched trench decreases with the progress of etching depth.
   利用自感应耦合等离子（ICP）蚀刻机进行硅深层反应离子刻蚀，得到了几微米宽的狭槽，其轮廓通常为正锥形，即蚀刻槽的宽度随着蚀刻深度的增大而减小。
8. Secondly, the deep-etching technique for silicon which is suit for ICP-98A high-density inductively coupled plasma etcher has been studied.
   其次对适用于ICP-98A高密度等离子体刻蚀机的硅深刻蚀技术进行了研究。

noun

1. someone who etches