fets
英
美
网络 场效应晶体管; 场效应管; 晶体管; 驳船信息交互系统; 微波场效应管
双语例句
- Very likely you have burnt your FETs on car, time to change it.
很有可能你的FET已烧了，最好验正后换掉。 - GaAs Epitaxial Growth of n~+-n-n~-Multilayer for Dual-Gate FETs
用于双栅FET的n~+-n-n~-GaAs多层外延生长 - Heterojunction FETs fabricated with these meterials exhibit HEMT's performance. No persistent photoconductivity or drain current collapse is observed at 77K.
用该材料制得的异质结场效应晶体管显示出HEMT的性能，77K下未观察到持续光电导效应和I&V特性崩塌。 - With these materials, power FETs with better performances at C-X band have been prepared.
用本方法制管的多层外延材料制作C-X波段功率FET，得到了较好的结果。 - The Epitaxial Material for FETs with Chromium-Doped GaAs Buffer layer
掺铬GaAs缓冲层的FET外延材料 - Ku Band GaAs FETs for Oscillators
Ku波段振荡用GaAs场效应晶体管 - Numerical simulation of steady state temperature field in microwave GaAs power FETs
微波GaAs功率场效应晶体管稳态温度场的数值模拟 - The pMOS FETs with thick oxide layer were irradiated with transient X-rays or intensive pulsed low energy electron beam, and the radiation effects were investigated by continuous measurement of the threshold voltage.
对电离辐照敏感的厚氧化层pMOS场效应管进行了X射线和低能强流电子束的瞬态辐照实验；通过对阈电压漂移的跟踪监测，研究了pMOS场效应管的瞬态电离辐照效应。 - Calculation and Analysis of Small-Signal Microwave Network Parameters of GaAs FETs
GaAsFETs的小讯号微波网络参数的计算和分析 - The properties of the newly-developed, double-gated FETs were tentatively analyzed with the energy band theory.
利用能带图分析了双底栅器件的特性。 - In this paper, a combination optimization algorithm used to extract the accurate small-signal parameters of microwave FETs is proposed. It combines simulated annealing method with space coordinate transformation based on principal component sensitivity analysis.
提出一种将模拟退火法与基于主成份灵敏度分析的空间坐标变换相结合的优化算法，用以精确提取微波场效应管小信号等效电路参数。 - Two-Dimensional Numerical Analysis of Negative Electron Differential Mobility FETS
负电子微分迁移率场效应管的二维数值分析 - The power FETs are more and more widely used in radio-frequency power amplification in all-solid state transmitter.
场效应功放管在全固态发射机的射频功放中应用得越来越广泛。 - A simple kind of field effect transistor self electrooptic effect device ( FET SEED) smart pixels has been fabricated by interconnecting SEEDs and GaAs FETs on a printed circuit board.
在一块印刷电路板上通过将自电光效应器件（SEED）与GaAs埸效应晶体管（FET）进行互连制作了一种简单的场效应晶体管－自电光效应器件（FET－SEED）灵巧像素。 - A Novel Method for Extracting Equivalent Circuit Parameters of Microwave FETs
一种新的微波场效应管等效电路参数提取方法 - The experimental. results were interpreted by means of the irradiation-induced oxide traps and interface traps in MOS structure, and the equivalent diode circuits of pMOS FETs under transient irradiation.
运用辐射感生氧化物、界面缺陷模型并结合MOS器件寄生二极管等效电路模型解释了实验结果。 - Silicon gate P-MOS technique has been adopted in developing the device, and a kind of three FETS dynamic circuit with varactor bootstrap has been adopted in developing the shift register used as scanned circuit.
该器件采用了硅栅P-MOS工艺，而作为扫描电路的移位寄存器是采用的一种带变容管自举电路的三管动态无比电路。 - Based on his work experience, the author puts forward a method and operation procedure for replacing final power FETs for the colleagues'reference.
本文作者通过自己在工作中的摸索和积累，总结出了一套更换末级场效应功放管的方法和操作步骤，以供同行参考。 - The combination of FETs with bipolar devices has become one of the tendencies of development for novel, specifically integrated op amps.
场效应管与双极型器件相结合，已成为新型专用型集成运算放大器的主要发展方向之一。 - C Band 4 W Power GaAs FETs
C波段4W砷化镓功率场效应晶体管 - These FETs are suitable for multi-chip use with higher power combining efficiency.
这种FET的多芯片运用具有优良的功率合成效率。 - The fabrication of PECVD SiN films, and its properties and applications in GaAs FETs are described.
叙述了PECVDSiN的制备、性能及其在GaAs场效应器件中的应用。 - The input dynamic range of the amplifier was improved by using FETs in the input stage, good frequency behaviour was achieved by cascode amplifying.
采用场效应管作输入级来提高放大器的输入动态范围，共射-共基的放大形式使中间级具有好的频率特性，还设计了输出级的大电流保护电路。 - With these years of research and development, conducting polymer patterns have been widely applied in many areas, such as field-effect transistors ( FETs), light emitting diodes, electrochromic devices, and sensors.
随着这些年的研究发展，导电高分子的微纳米图案已经被广泛地应用到了场效应晶体管、发光二极管、电致变色器件、传感器等领域。 - A lot of devices based on nanowires including FETs lasers, and photodetectors have come out, which show broad application prospects.
近年来，半导体纳米线因为其独特的物理特性成为人们研究的热点，许多基于纳米线的电子和光电子器件如场效应管、激光器、探测器等纷纷问世，并展现出广阔的应用前景。 - The electrical and optoelectronic performances of back-gate CdS: P NR FETs have been studied systematically.
系统研究了磷掺杂CdS纳米带底栅场效应管的电学和光电学性能。 - These results revealing that controllable N-doping in graphene was realized by NH3 annealing after N+ ion irradiation. ④ To investigate the electronic properties of different graphene samples, the graphene-based back-gate FETs were fabricated.
结果说明了离子注入的石墨烯通过在氨气中退火，实现了N掺杂；④为了研究不同石墨烯样品的电学性质，制备了背栅石墨烯场效应晶体管。 - The primary coverage and results of this thesis are given as follows: ( 1) The electron transport properties of ultra-thin Si nanowire FETs are studied. The effect of doping in Si nanowires on these FETs is revealed.
该论文的主要内容及取得的研究结果如下：（1）研究了基于超细硅纳米线的场效应晶体管的电子输运性质，探讨了纳米线的结构及掺杂对其电子输运性质的影响。 - The main purpose of this thesis is to obtain CNT-field effect transistors ( FETs) with high performance especially with high switching ratio.
本论文工作的主要目的是通过对碳纳米材料及其场效应器件的研究，得到具有优良性能尤其是高电流开关比的器件。