GaAs/ InP and Si/ GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic Devices Money is supposed to preserve life, but the way I earned it, it had the opposite effect. GaAs/InP、Si/GaAs异质外延生长技术及其在集成光电子器件中的应用钱是延长生命的,我的挣法适得其反。
Commercial GaAs epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible. 市售GaAs外延层的质量相当高,故其材料和界面起伏引起的损耗可忽略不计。
Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/ AlAs multiple quantum wells 量子限制效应对δ掺杂GaAs/AlAs多量子阱中铍受主态寿命的影响
The RHEED Analysis of GaAs Samples in MBE System MBE系统中GaAs样品的RHEED分析
Study of Monolithic Integrated GaAs-Based Long Wavelength Resonant Cavity Enhanced Photodetector 单片集成GaAs基长波长谐振腔光探测器的研究
GaAs dual-gate FET and application in microwave circuits 砷化镓双栅场效应管及其在微波电路中的应用
Study on the model of quantum efficiency of reflective varied doping GaAs photocathode 反射式变掺杂GaAs光电阴极量子效率模型研究
Study of InAs/ GaAs Quantum Dots InAs/GaAs系列量子点研究
The feedback circuit employs a GaAs photoconductive switch, which has simple structure and reliable performance. 光电反馈线路采用普通的砷化镓光电导开关,具有结构简单、性能可靠的优点。
GaAs semiconductor Generator rotator Temperature measuring system; 砷化镓半导体;发电机转子;测温系统;
Influence of different Cs-to-O current ratios on sensitivity and stability of activating GaAs photocathodes 不同Cs、O电流比激活对GaAs光阴极灵敏度和稳定性的影响
In this paper, a small Hall current sensor made from a GaAs Hall component is introduced. 介绍了一种利用砷化镓霍尔元件设计的微型霍尔电流传感器。
Characteristic study of maximum modal gain of p-doped 1.3 μ m InAs/ GaAs quantum dot lasers p型掺杂1.3μmInAs/GaAs量子点激光器的最大模式增益特性的研究
The research of Curie temperature for GaAs doped with 3d transition metal 3d过渡金属掺杂GaAs的居里温度研究
Electrochemical Micromachining on Different Types of GaAs by Confined Etchant Layer Technique 不同类型GaAs上应用约束刻蚀剂层技术进行电化学微加工
Low Noise Amplifier Design and Achieve Based on GaAs HEMT 基于GaAsHEMT的低噪声放大器设计与实现
Study on Computer Controlled MBE AlGaAs/ GaAs Growth System 计算机自动控制MBEAlGaAs/GaAs生长系统研究
The design of C band GaAs MMIC low noise amplifier was described. 主要介绍了C波段低噪声单片放大器的设计方法和电路设计指标。
Study on the Growth and Optical Property of Polycrystal GaAs/ Ga_2O_3 Compound Film GaAs/Ga2O3复合多晶薄膜的生长与光学性能研究
Luxtera's design eliminates the need to use expensive group III – V compounds, such as gallium arsenide ( GaAs) and indium phosphate ( InP), in the semiconductors. Luxtera的设计消除了使用昂贵的III-V化合物半导体材料(如砷化镓和磷化铟)的必要。
Low noise GaAs amplifier chip and power amplifier module, higher RF output level; 3. 射频放大采用低噪声砷化镓放大器件和功率放大模块,输出电平高;
Electron-and Hole-spin Relaxations in InAs/ GaAs Single Quantum Dots InAs/GaAs单量子点中电子/空穴自旋弛豫
Design and Simulation of a GaAs-based MOEMS Wavelength Tunable Filter GaAs基MOEMS波长可调谐滤波器的设计和理论模拟
Study of GaAs HEMT-Embedded Accelerometer Structure and Process Design GaAs基HEMT嵌入式加速度计结构与工艺设计研究
Research on Sb Laser Material and Device for AlGaAsSb/ InGaAsSb on GaAs Substrate GaAs基AlGaAsSb/InGaAsSb锑化物激光器材料和器件的研究
Symmetry Constraints of the Magic Angular Momentums and the Electronic Structures of GaAs Quantum Dot GaAs量子点中电子结构和幻角动量的对称性分析
Study of Non-linearity of Laser Triggered GaAs Photoconductive Switch 激光触发GaAs光电导开关非线性现象的实验研究
Indentation-induced Plasticity, Damage and Fracture in Si and GaAs Single Crystals 压痕诱发GaAs和Si晶体塑性、损伤与断裂
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported. 报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
Research of Polished Technology of VB GaAs Wafers VB-GaAs单晶片抛光技术研究