isoelectronic
英
美 [ˌaɪsoʊɪlɛkˈtrɑnɪk]
adj. 等电子的
双语例句
- This includes atomic radius and the idea of isoelectronic atoms.
包括原子半径，以及等电子原子的概念。 - So whether we finish it today, or more likely when we finish it up on Friday, once we get passed isoelectronic atoms, that's it, that's all you need to study for this first exam.
因此，我们也许今天讲完，或者更有可能周五讲完，无论如何，就到我们讲完等电子原子为止，这是你们第一次考试所需要准备的全部内容。 - Then also, nitrogen, 3 minus& these are all going to be isoelectronic with neon.
然后还有，氮，负三价-，这些都是与氖原子等电子的。 - So, let's do a clicker question on isoelectronic atoms.
那么，让我们来做一个关于等电子原子的选择题吧。 - Some aspects of the transition are analogous to III-V semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.
该跃迁的某些性质类似于含少量氮搀杂的III-V族半导体材料，因此它有可能同样起源于等电子缺陷。 - And then, if we have time at the end, we'll introduce one last topic, which is isoelectronic atoms and ions.
最后，如果有时间的话，我们将再介绍最后一个主题：，等电子原子与离子。 - So, that's the idea of isoelectronic ions.
好，这就是等电子离子的概念。 - Quantitative valence bond studies of the isoelectronic series xo_3~-and bf_3.
等电子系列xo3~-及bf3的定量价键阐述。 - These structural rules are concentratedly expressed by the total coordination numbers and the periodic table of isoelectronic molecules.
这些结构规则以总配位数式和等电子分子周期表为其集中的体现形式。 - The geometry optimization of reactants, transition states, intermediates and products are made at MP2/ SDD level and the isoelectronic density graphs of some molecules are plotted.
我们优化了反应通道上各驻点，即反应物、过渡态、中间体和产物的几何构型，并得到了主要驻点的等电子密度分布图。然后在同一水平上计算能量，同时进行零点能校正。 - Ab initio Study on Electronic Structure and Stability of N_3 ￣-and Its Isoelectronic System
N3~－及其等电子体系的电子结构和稳定性的Abinitio研究 - The article briefly discusses isoelectronic principle and some applications.
简介了等电子原理的文字表述，并应用该原理解释了一些无机化学中常见的、不同类型的等电子体的结构和性质。 - Time-resolved photoluminescence of Te isoelectronic center in ZnS
ZnS中Te等电子中心的时间分辨光谱研究 - Upper and Lower Bounds for Electronic and Total Energy of the Isoelectronic Molecular Systems
等电子分子体系基态电子能和总能量的上下限 - Hybrid orbitals and orbital interactions of bh_3 and its isoelectronic fragments
BH3及其等电子分子片的杂化轨道和轨道相互作用 - Theoretical Studies on Structures and Properties of Benzene and Its Nitrogen Isoelectronic Equivalents
苯及其含氮等电子体化合物的结构和性质的理论研究 - The pressure behaviors of electron-phonon coupling strength of N isoelectronic trap and effective radius of bound exciton are discussed.
讨论了N等电子陷阱的电声子耦合强度及有效束缚激子半径随压力的变化关系。 - Influence of Isoelectronic Impurity Sb on Defects in InP
等电子杂质Sb对InP中缺陷的影响 - The quenching efficiency of the polar molecule, CO, is larger than other molecules, such as the: isoelectronic molecule, N_2, showing that intermolecular dipole-induced dipole interaction may play an important role in enhancing the molecular quenching.
极性分子CO与I2碰撞的猝灭效率较非极性分子（如与之等电子的N2）大，表明分子间偶极-诱导偶极相互作用对促进分子反应起着不可忽视的作用。 - Isoelectronic Principles and Structural Rules of Small Molecule
等电子原理与小分子结构规则 - The photoluminescence properties of nitrogen isoelectronic impurity in Ga_ ( 1-x) Al_xAshave been investigated at 4.2K.
本文通过光致发光手段研究了4.2K下Ga（1-x）AlxAs中等电子杂质氮的发光行为。 - Relation between ionization energy of isoelectronic atom& ion and atomic number
等电子原子离子的电离能与原子序数的关系 - The Analytic Energies of the 2s Electrons for Isoelectronic Sequence Ions and the Regularity of the Quantum Defects
类锂等电子系列离子2s电子能量解析值与量子数亏损规律的研究 - Isoelectronic atomic model and effective nuclear charge
等电子原子模型与有效核电荷 - Isoelectronic atomic model and ionization potentials of atoms
等电子原子模型与原子电离势 - The screened hydrogenic model is employed to calculate the oscillator strengths f and core polarization coefficients α of dipole transition in the sodium isoelectronic sequence, the results are agreed with relevant documentation.
应用屏蔽氢模型计算类钠等电子系列电偶极子跃迁振子强度f和原子（离子）实极化系数α，计算结果和有关文献是一致的； - It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.
文中提出了一种少量等电子掺杂和显微光致发光谱相结合的方法来直接观测半导体材料带边以上的跃迁能级，尽管光致发光谱通常没有用来观测这些能级位置。 - Radiative Recombination between Isoelectronic Trap and Zn Acceptor in GaP: N, Zn
GaP：N，Zn中等电子陷阱与Zn受主之间的辐射复合