mos
英
美
abbr. 保养与作业支援(Maintenance and Operations Support); 主要作业系统；主要运行系统(Major Operating System); 管理作业系统(Management Operating System)
双语例句
- Considering the need for modulation speed and power consumption, a kind of silicon MZM based on MOS capacitor electrodes is studied by a simulation method combining electric and optic analytic model.
采用有限元方法，通过构建光和电结合模拟方法，对一种双硅层的MOS电容电极MZM的静态和动态性能进行了理论研究。 - A modeling methodology for MOS varactor was presented for applications at millimeter-wave frequencies.
提出了应用于毫米波段的MOS变容管的建模方法。 - Preparation and Friction Properties of MoS_2/ WS_2 Composite Films Deposited by Magnetron Sputtering
磁控溅射MoS2/WS2复合薄膜的制备及其摩擦学性能研究 - The bipolar transistors or the resistors in the traditional current reference were replaced by MOS transistors working in the subthreshold region to achieve an all CMOS current reference.
利用工作在亚阈值区的MOS管代替传统电流基准中的三极管或电阻器件，实现了一款全CMOS器件的电流基准。 - Fabrication and charging characteristics of metal nanocrystals in MOS capacitor structure
金属纳米晶的制备及其在MOS电容结构中的存储特性 - A design method for binary neuron MOS circuits employing a summation signal with multiple values is presented.
提出一种通过引入多值求和信号指导设计二值神经元MOS电路的方法。 - There are obvious shortages while this model applied for small dimension MOS devices.
指出该模型在模拟小尺寸器件时的不足之处。 - First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices.
首先，增加了处理速度和功能密度的需求，推动IC制造者进一步缩减MOS装置的最小尺寸。 - Effects of Annealing Ambiences on Electrical Properties for Ge MOS Capacitor
退火气氛对GeMOS电容电特性的影响 - Impact of Double-Hump Substrate Current on the Degradation of High Voltage MOS Transistor
双极值衬底电流对高压MOS器件退化的影响 - V-groove MOS field effect transistor
V形槽MOS场效晶体管 - Effects of Surface Passivation on Reliability of Ge MOS Capacitors
表面钝化对GeMOS电容可靠性的影响 - The low-frequency power amplifier based on MOS tube
基于MOS管低频功率放大器的设计 - Accordingly, such a semiconductor device can be fabricated easily in which a MOS type element and a bipolar element are formed on the same chip in a mixed manner.
从而，能够容易制造出在同一个芯片上混装了MOS型元件和双极元件的半导体装置。 - Design of multi-valued double-edge-triggered D flip-flop based on clock-controlled neuron MOS transistor
基于钟控神经MOS管的多值双边沿D触发器设计时标触发器定时触发器 - A study was carried out on three-level circuit, MOS in parallel etc.
对三电平电路、MOS管并联等进行了研究。 - Working Process Analysis of the SCR-Power MOS FET Chopper
晶闸管&功率场效应管斩波器工作过程分析 - Several emphases about LC VCO design, including high Q on-chip inductor design, MOS-varactor design and tail current choice, are presented.
根据前面的分析，详细介绍了LCVCO电路的设计方法：包括高Q值片上电感的设计、变容MOS管的设计以及尾电流的选取。 - Study of Structure and Performance of Unbalanced Magnetron Sputtering MoS_2-Ti Coating Affected by Deposition Pressure
沉积压力对非平衡磁控溅射沉积MoS2-Ti复合薄膜的结构与性能影响研究 - A rectangular wave generating circuit has been designed with MOSFETs, half bridge driver chip LM27222 and gate drive transformer.
利用MOS管、半桥驱动芯片LM27222、栅极驱动变压器等器件，设计了变极性矩形波发生电路。 - Researches on Nonuniformity Correction Technologies for Resistor Array
MOS电阻阵列非均匀性校正技术研究 - Self-heating effect and channel length modulation exist in high voltage MOS devices, due to their special and complex structure.
高压MOS器件具有复杂和特殊的结构，存在自热效应与沟道长度调制效应。 - Electric double-track railway system dual diffused MOS integrated circuit
电气化双轨铁路系统双扩散型MOS集成电路 - C-HMOS technology borrows many of the design and performance characteristics of high-performance MOS ( HMOS).
HMOS技术援引了搞性能MOS（HMOS）中的许多设计和性能特征。 - The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.
以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极； - Design and Performance Study for AlN as the Gate Dielectric Material Applied to Nano-scale MOS Devices
应用于纳米级MOS器件的AlN栅介质材料设计及性能研究 - Single event upset rate analysis of SRAM/ MOS equipments in satellite optical communication system
卫星光通信系统中SRAM/MOS器件的单粒子翻转率分析 - Families and products of MOS memory for semiconductor integrator circuits
GB/T3437-1982半导体集成电路MOS存储器系列和品种 - Preparation of MoS_2 and Its Intercalation Compound and Their Performance Study
MoS2及其夹层化合物的制备与性能研究 - Influence of MoS_2 contents on sintering process of Cu-MoS_2 composites
MoS2含量对Cu-MoS2复合材料烧结过程的影响