photoresist
英
美
n. 光致（光敏）抗蚀剂；感光脂；光刻胶；光阻材料
第三人称单数：photoresists
双语例句
- Such photoresist polymer film might have extensive application prospect in optical devices, such as polymer optical waveguide amplifiers and lasers.
其发射波长与光刻胶的低吸收损耗区很好地匹配，可用于研发聚合物光波导放大器和激光器。 - In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.
另外，本文还利用时域有限差分法分析了光刻胶层内部的光场分布。 - Recording the interference fringe produced from two coherent light beams by use of photoresist is a key process in manufacturing a holographic grating.
由光致刻蚀剂记录两束相干光干涉条纹是制作全息光栅的关键步骤。 - Study on Synthesis of Photoresist and Photochemical Process for Information Recording in Laser Disc
激光光盘信息记录光刻胶的合成与感光 - The parts of the photoresist struck by the light can be selectively removed, exposing parts of the silicon wafer in a way that replicates the original pattern.
光阻剂受光照射的部份可以选择性移除，因此在晶圆上露出原来图案复制的部份。 - After removing the photoresist, other machines can fill those trenches with various materials, such as copper or aluminum, that comprise the components of the processor.
去除光阻剂以后，其他机器会在蚀刻痕迹中填入各种各样的材料，如铜或铝，它们是构成处理器的组件之一。 - In microelectronics, the process of removing material, on a chip, left exposed by the exposure and development of the photoresist.
在微电子技术中，通过曝光并显影光刻胶除去芯片上的物质露出剩余部分的工艺。 - Optical SSB modulation using fiber Bragg grating and its transmission performance photoresist edge build up
基于窄带光纤光栅的单边带调制及其传输特性硅片边缘上光刻胶的积累 - Because photoresist exposure requires less energy than link blowing, low-power UV lasers ( 120) can be employed, and their shorter wavelengths permit a smaller practical laser output spot size ( 98).
因为光敏抗蚀剂的曝光所需能量小于接点吹除所需能量，所以可采用低能紫外激光（120），而且这些激光的较短的波长允许有更小的实用激光输出光斑尺寸（98）。 - Processes of SU-8 photoresist mold and polymer elastomeric stamp were researched in order to solve the technology of the key part& elastomeric stamp in the soft-lithography.
为了解决软光刻技术中核心元件弹性印章的制备技术，对SU-8胶印模和聚合物弹性印章进行了工艺研究。 - This paper describes the maskless wiring formation technology not using photomask and photoresist, development of metal nano particle and nano ink, application of the inkjet method and future theme.
概述了不使用光致掩模和光致抗蚀剂的无掩模布线形成技术，金属纳米粒子和纳米油墨的研究开发，喷墨法的应用和今后的课题。 - Optical Radiative Transition Characteristics of Eu ( TTFA)_3-Doped Resin Photoresist Polymer Film
树脂型光刻胶薄膜中Eu~（3+）的辐射跃迁特性 - Then the wafer is sent through a chemical bath that etches trenches into the exposed substrate, while leaving the areas covered by the photoresist untouched.
晶圆再经过化学浸浴，利用腐蚀剂去蚀刻暴露出来的硅基质，同时那些覆盖有光阻剂的区域依然完好无损。 - Under specific processing conditions, the nonlinearity of photoresist is strong, which can be advantageously used to make rectangular holographic grating masks.
在特定的工艺条件下，光刻胶的非线性效应非常显著； - The most prevalent procedure is to use photolithography or electron-beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer.
最常用的步骤是用光蚀刻或电子束蚀刻法，在矽晶圆表面的光阻层上制作出图案。 - In one embodiment, an IC ( 12), including one or more etch targets ( 104,106) such as conductive links ( 72,92), is coated with an etch protection layer ( 90) of photoresist material.
在一个实施例中，一片IC（12）包括一个或更多刻蚀靶（104106）如导电接点（72，92），并覆盖有一层光敏抗蚀剂材料的刻蚀保护层（90）。 - A novel pressure sensor based on a high-aspect-ratio structure formed by SU-8 photoresist is proposed.
主要提出了一种利用SU-8光刻胶形成高深宽比结构的新型压力传感器。 - The lift-off technic based on traditional photolithography using positive photoresist, which requests the thickness of photoresist must be more than that of thin film.
基于一般正胶光刻工艺的剥离工艺，所需胶膜的厚度要大大超过剥离薄膜的厚度。 - Effective Red Fluorescence of Eu ( TTFA)_3-doped Epoxy-based Photoresist Polymer Film
Eu（TTFA）3掺杂环氧基光刻胶薄膜的强烈红色荧光 - Based on the study of the critical angle effect, a new method named step heat-forming photoresist method to expand the N.A.range of microlens array is presents.
在对临界角效应定性研究的基础上，提出了用阶梯光刻热熔法来扩展热熔型微透镜阵列的数值孔径范围。 - The influence of recording conditions on the signal-to-noise ratio of retrieved images for photoresist Fourier transform holograms
光刻胶傅里叶全息图的记录条件对重构图像信噪比的影响 - Simulation and experiments of monitoring curves on development of holographically recorded photoresist gratings
光刻胶全息光栅显影监测的模拟与实验 - Two-spectrum Method for Measuring the Thickness of Photoresist in Lithography Techniques
双光谱法实现光刻工艺中的胶厚检测（玻璃）磨光刻花法 - RELACS process could be used to manufacture T-gate with various type photoresist.
RELACS技术可以应用于不同光刻胶类型的“T”，型栅制作中。 - Design and Machining Process Simulation of Precision Milling Machine for SU-8 Photoresist
SU-8胶膜精密铣床设计及加工过程仿真 - Photoresist edge build up
硅片边缘上光刻胶的积累 - This paper study the dimensions and tolerances of SU-8 photoresist microstructures quantitatively.
对SU-8胶微结构的尺寸及其公差进行了定量研究。 - Ti/ Pt microelectrode was fabricated based on glass by standard photoresist processing of lift-off processing.
文中胞解芯片的制备采用了剥离工艺的标准光刻胶处理方法，在玻璃基底上制备了Ti/Pt微电极。