planarization

网络  平坦化制程; 平坦化; 平坦化能力; 平面化技术; 化学机械平面化

计算机



双语例句

  1. The conditioning ring polishing machining is used for ultra-precision planarization; and kinematical analysis on pitch polishing is carried out.
    修正环型抛光机用于超精密平面抛光,并对沥青抛光进行了运动学分析。
  2. Research Progress on High Precision Planarization Technology for Solid Surface
    固体表面高精密平面化技术研究进展
  3. Authors tried to develop a novel planarization process using polishing techniques before the continuous process at the PCB fabrication.
    作者尝试去开发一种新型的整平化技术过程中,在接下来的PCB制造前使用了抛光工艺。
  4. This paper introduces that we can reduce Within wafer nonuniformity ( WIWNU) to achieve part and full planarization by distributing the speed of polishing head and polis.
    介绍了在化学机械抛光过程中,可以通过抛光头与抛光台运动速度关系优化配置,降低晶片表面不均匀度,从而更好地实现晶片局部和全局平坦化。
  5. Study of the Chemical-Mechanical Global Planarization of Low-k Dielectric in ULSI
    ULSI中低k介质的化学机械全局平坦化分析研究
  6. Currently, Chemical Mechanical Polishing ( CMP) is the most effective technology to obtain the ultra smooth and damage free surface of wafer and the only way to achieve the local and global planarization of wafer.
    目前,化学机械抛光(ChemicalMechanicalPolishing简称CMP)是硅片加工和多层布线层间平坦化中最终获得纳米级超光滑无损伤表面的最有效工艺方法,也是能够实现局部和全局平坦化的实用技术。
  7. This study provides a new way for chemical mechanical planarization.
    这个研究为单晶硅片的集成平坦化抛光提供了一种新的方式。
  8. And the slopes of characteristic line sections represent planarization of film surface.
    特征线段的斜率反映了薄膜表面的平面度。
  9. The key solutions for the issues are large particle size control, new chemical for planarization and metal polishing control, and introducing controlled pores into SOG material.
    这些材料的关键之处在于大颗粒尺寸的控制,进行平面化和金属抛光的化学控制以及将控制方法用于旋涂玻璃()材料。
  10. Application of CMP Planarization in LCoS
    CMP平坦化技术在LCoS显示器中的应用
  11. Chemical-mechanical polishing ( CMP) process is the key important planarization process in ULSI manufacturing. The RBR control applied on the CMP process is introduced in this paper.
    本论文介绍了RBR过程控制技术在超大规模集成电路(ULSI)制造中的化学机械抛光(CMP)这一关键工艺中的应用。
  12. Chemical-mechanical polishing ( CMP) is widely used in planarization of silicon substrate and multilayer metal interconnection construction and becomes one of core technologies in ULSI fabrication.
    在集成电路(IC)制造中,化学机械抛光(CMP)技术在单晶硅衬底和多层金属互连结构的层间全局平坦化方面得到了广泛应用,成为制造主流芯片的关键技术之一。
  13. The copper chemical-mechanical polishing ( CMP) which is the key planarization technology for ULSI manufacturing was discussed.
    对用于甚大规模集成电路(ULSI)制造的关键平坦化工艺&铜化学机械抛光(CMP)技术进行了讨论。
  14. In the network world, centrality and planarization& the spiritual keynote in post-modern philosophy is fully manifested.
    网络世界中充分体现了后现代哲学的精神主旨:中心与平面化。
  15. A Planarization Technique for Fully Dielectrically Isolated SOI IC's
    一种适合SOI全介质隔离电路的平坦化技术
  16. A Planarization Process Based on Reflowing Characteristic of Photoresist
    基于光刻胶回流特性的平面化工艺
  17. At the present time, chemical mechanical planarization ( CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.
    目前,化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。
  18. A model of material removal rate during chemical mechanical planarization of Microelectronic Materials
    微电子材料化学机械平坦化加工中的材料去除率模型
  19. Using the polishing pad with grooves or rougher surfaces can increase the material removal and planarization rate.
    抛光垫粗糙的表面有利于提高材料去除率。
  20. The planarization problem consists of two parts: the planarization testing and the plane-embedding.
    平面问题包括两部分:平面性测试和平面嵌入。
  21. Chemical mechanical polishing ( CMP) is the best planarization technology of manufacturing technology of ultra-large-scale integrate circuits ( ULSI).
    化学机械抛光(CMP)是超大规模集成电路制造技术(ULSI)中最佳平坦化技术。
  22. As the best technique for the planarization processing of ultra large scale integration circuits ( ULSI), chemical mechanical polishing ( CMP) has became an indispensable technique in the manufacture of various devices with ultra-smooth surface.
    化学机械抛光(CMP)作为超大规模集成电路制造(ULSI)工艺中公认的最佳平坦化加工工艺,已成为ULSI制造中不可或缺的技术。
  23. The lithography and chemical mechanical planarization ( CMP) processes show significant dependencies on layout patterns in the advanced fabrication, and cause variations of feature size in horizontal and vertical dimension respectively.
    光刻和化学机械抛光等先进制造工艺都表现出对芯片版图图形的依赖,并分别造成了电路元件横向和纵向尺寸的偏差。
  24. At present, chemical mechanical polishing ( CMP) is a practical method that can realize global planarization.
    化学机械抛光是目前能实现全局平面化较为实用的一种方法。
  25. Chemical mechanical planarization ( CMP) technique is a key process enabling shallow trench isolation ( STI) in semiconductor manufacture today, which is used in current integrated circuit manufacturing processes to achieve device isolation.
    浅沟道隔离是目前大规模集成电路制造中用于器件隔离的主要方法,而化学机械平坦化(CMP)技术是当今半导体制造中形成浅沟道隔离(STI)的关键技术。
  26. Global Planarization is a key process in the fabrication of Integrated Circuits ( IC) wafers, because it can provide more interconnect layers and guarantee high speed data transmission.
    在集成电路芯片的制造中,为了实现多层互连和层间数据高速传输,必须进行全局平坦化。
  27. The chemical mechanical planarization ( CMP) in semiconductor manufacturing technology is today the formation of shallow trench isolation ( STI) of the key technologies.
    而化学机械平坦化(CMP)技术是当今半导体制造中形成浅沟道隔离(STI)的关键技术。
  28. Single crystal silicon wafer has been widely used in the semiconductor industry, as the basic substrate material for the integrated circuits. Ultra-precision grinding technology is the core technology of a semiconductor chip substrate planarization processing and back thinned processing.
    单晶硅是优良的衬底材料,被广泛应用于半导体产业中,超精密磨削技术是半导体芯片衬底平坦化加工和背面减薄加工的核心技术。
  29. The application trend of RF and microwave circuits in modern communication technologies is planarization, miniaturization, and integration.
    射频微波电路在现代通信技术中的应用趋势是平面化、小型化、集成化。