punch-through
英 [pʌntʃ θruː]
美 [pʌntʃ θruː]
网络 穿通; 穿透; 贯穿; 穿通效应; 器件穿通
双语例句
- Meanwhile, the high risk of punch-through due to process limitation was described when channel length became smaller and source junction became shallower.
m时，由于制造工艺的局限性以及沟道长度变短、结深变浅后，器件穿通风险加大。 - Measurements of the direct-current properties of a punch-through phototransistor
穿通型光电晶体管的直流特性测试 - Working in a deep punch-through state during its normal operating condition, it still possesses all the characteristics of the robust non-punch-through IGBT ( NPT-IGBT).
虽然在正常工作条件下，该新结构IGBT工作于穿通状态，但器件仍具有非穿通IGBT（NPT-IGBT）的优良特性。 - Improving Source-Drain Punch-Through Voltage in 2-μ m p-Well CMOS Process
2μmp阱CMOS工艺中提高源－漏穿通电压的方法 - When the bias voltage was greater than the punch-through voltage, we found that the detector capacitance decreases with the increasing frequency, and increases with the increasing temperature.
当探测器两端的偏置电压大于穿通电压时，发现探测器的电容随着频率的增大而减小，随测试温度的升高而增大。 - To ensure the push-pull output of the power devices to work safely without the phenomenon of punch-through, it consists of typically 1.1 μ s dead time.
为保证图腾柱输出的功率器件能安全工作而不发生直通现象，内设典型值为1.1μs的死区时间。 - However, the channel length of traditional UMOSFET is restricted by punch-through breakdown effect.
但是，传统的UMOSFET的沟槽长度的减小受体区穿通击穿效应的限制。 - A novel IFO technology is proposed for high side thick gate oxide device to avoid punch-through breakdown induced by thin layer SOI back-gate effect. The technology includes a criterion of the punch-through breakdown and an implantation process for precise control of the punch-through breakdown voltage.
提出一种场氧离子注入IFO技术。该技术包含一个穿通击穿电压判据和一项注入工艺设计，可精确控制薄膜SOI背栅效应导致的高端厚栅氧器件的穿通击穿电压。