Cadmium sulphide or cadmium selenide in polymer based thin film transistor. 聚化合物薄膜电晶体内的硫化镉或硒化镉。
In the first step, sodium hydrogen selenide is prepared on the material of selenium powder and sodium borohydride in solvent anhydrous ethanol. 在正丁胺的催化下,酮与硒氢化钠、二硒化钠乙醇溶液通过“一锅”法反应得到了中等产率的二硒醚。
To this thin film, they chemically linked quantum dots made of cadmium selenide for sensitization. 他们把硒化镉制成的量子点用化学方式连接在了这种薄膜上,用于敏化。
Global Solar uses a technology known as copper indium gallium selenide ( CIGS) to make its thin-film solar cells. 全球太阳能利用技术称为铜铟镓硒(CIGS)将其薄膜太阳能电池。
A variety of chemical preparation methods of cadmium selenide ( CdSe) nanomaterials have been reviewed and discussed; moreover, preparation and properties of cadmium selenide nanowire arrays have also been studied. 作者通过对CdSe纳米材料化学制备方法的综合评述,对CdSe纳米线阵列的制备和性质进行了初步研究。
Domestic Production and Application of Infrared Material Zinc Selenide 国内红外材料硒化锌的生产及应用
Micro-area Structure and Optical Absorption of Amorphous Cadmium Selenide 非晶硒化镉微区结构及光吸收性能
Study on Cadmium Selenide Thin Film in reference to Its Structural Configuration and Spectral Characteristics 硒化镉薄膜结构形貌和光谱特性的测试与探索
A Study on Andrographolide Selenide 穿心莲内酯硒化物的研究
Application Research of 2-Hydroxyalkyl Phenyl Selenide Reagents in Organic Synthesis 2-羟基烷基苯基硒醚试剂在有机合成中的应用研究
This article summarized the three toxic constituent of locoweed: aliphatic nitro compound, selenium and selenide, locoweed toxin ( alkaloids). 概述了疯草三类主要有毒成分:脂肪族硝基化合物、硒及硒化合物、疯草毒素(生物碱)。
Firstly, Polystyrene-supported benzyl selenide has been prepared from 1% cross-linked polystyrene resin. 以1%交联的聚苯乙烯为载体,首次合成了聚苯乙烯负载的苄基硒醚。
Some single-layer films of 9 infrared thin film materials, which include fluoride, sulfide and selenide, have been made by resistive heating evaporation or electron beam bombardment technique. 采用电阻蒸发和电子束蒸发方法,制备了9种红外薄膜材料的单层膜,包括氟化物、硫化物和硒化物。
New technology of once sintering sulphide selenide cadmium base red glaze is researched. 研究了一种一次烧成镉硒红釉的新工艺。
Study of Zinc Selenide Based Pigments 硒化锌基颜料的研究
Cadmium Selenide ( CdSe) is a ⅱ& ⅵ compound semiconductor with direct transition, wide-band-gap. 硒化镉(CdSe)是直接跃迁宽禁带隙的Ⅱ&Ⅵ族化合物半导体材料。
Surface Electrode Studies of the Cadmium Selenide Room Temperature Nuclear Radiation Detector 硒化镉室温核辐射探测器的表面电极研究
Synthesis of silver selenide quantum dots using room temperature conversion method 利用室温转化法合成硒化银量子点
The second-generation solar cell includes cadmium telluride, copper indium gallium selenide and other types. 第二代太阳能电池包括碲化镉、铜铟镓硒等类型。
Related studies have shown that iron selenide thin film has good electrochemical stability, which makes it can be used as a good lithium battery cathode material. 研究表明,二硒化铁薄膜具有良好的电化学稳定性,可能成为一种优良的锂二次电池正极材料。
The optical properties of zinc oxide and zinc selenide nanotubes are independent of diameters and chirality also. 不同管径和螺旋度的氧化锌、硒化锌纳米管也具有相似的光学性质。
Zinc oxide and zinc selenide nanotubes are direct band gap semiconductors and the gaps are independent of diameter and chirality. 氧化锌、硒化锌纳米管都是直接带隙的半导体,而且这种带隙不会随管径和螺旋度的变化而变化。
Zinc oxide and zinc selenide nanotubes show different properties from carbon and boron nitride nanotubes. 氧化锌、硒化锌纳米管显示出和碳纳米管、氮化硼纳米管不一样的特点。
The vanadium oxide thin films are prepared on zinc selenide by DC magnet sputtering method. The X-ray photoelectron spectroscopy ( XPS) test and data fit are performed and the components control in the films is realized by annealing. 在硒化锌基片上制备了氧化钒薄膜,对薄膜进行了X射线电子能谱测试和数据拟合,并对其进行了退火处理来调节薄膜内组分。
The goal of this dissertation is to explore and study novel synthetic methods and routes to synthesize semiconductor cadmium selenide nanoscale materials with controlled structures and various novel morphologies, authenticate the as-synthesized products and study their electronic and optical properties. 本论文主要探索新的方法和途径可控地合成具有一定形貌和结构的硒化镉半导体纳米材料,并对所制备的硒化镉纳米材料进行鉴定和表征,对其光、电学性质进行研究。
The infrared detectors made from lead selenide thin films have high quality and high sensitivity. 由硒化铅薄膜制备的红外探测器具有质量高,灵敏度高等特点。
Lead selenide nano-particles have some special characters, and will widen application realm. 硒化铅量子点具有很多特殊性能,有望拓宽硒化铅的应用领域。
It is found that the stain energies of zinc oxide and zinc selenide single-walled nanotubes are lower than those for single-walled carbon nanotube and boron nitride nanotubes, indicating that the zinc oxide and zinc selenide single-walled nanotubes can be existent under certain conditions. 发现氧化锌、硒化锌的卷曲能比已被实验证实稳定存在的碳纳米管、氮化硼纳米管的卷曲能要低,这说明了氧化锌、硒化锌单壁纳米管在一定的实验条件下是可以存在的。