self-bias
英 [self ˈbaɪəs]
美 [self ˈbaɪəs]
网络 偏压; 自偏压; 自我偏压; 自给偏压; 自生偏压
双语例句
- It is because of aesthetics or aesthetic individual ability to self-bias lead to disappointment and self-body image caused by psychological problems.
它是因为个体自我审美观或审美才能偏差导致自我体像失望而引起的心理懊恼。 - It uses the traditional principle of bandgap reference together with the self-bias structure and startup circuit to get the stable voltage output and good temperature coefficient.
它利用带隙基准的基本原理，结合自偏置结构以及适当的启动电路，获得了相对稳定的电压值以及较好的温度系数。 - Characteristics of the Tuned Substrate Self-bias in a RF Inductively Coupled Plasma
射频感应耦合等离子体调谐基片自偏压特性的实验研究 - The traditional bandgap reference circuit was improved in the design, which includes the applying of self-bias structure and cascode structure. By using the improvement method, we obtained low power consumption, high linear and high PSRR PTAT current generator, which in a simple circuit structure.
并对传统带隙基准电路进行了改进，采用自偏置结构和共源共栅电流镜结构，用最简单的电路形式获得了低功耗、高线性度和高电源抑制比的PTAT电流产生电路。 - The influence of target self-bias voltage on the microstructure and electrical properties of sputtered BST films was investigated.
研究了自偏压对BST薄膜结构及电学性能的影响。 - In course of experiment of bistate, jumped delay phenomenon, another new phenomenon, the fluctuation of tuned substrate self-bias, was found again.
在对基片调谐偏压的跳变、双稳回滞现象进行研究的过程中，又发现了一种新的现象，这就是基片调谐偏压的振荡现象。 - All indicate that the higher RF power gives rise to a higher RF negative self-bias voltage and therefore a higher ion energy, which enhances the effect of ion bombardment and leads to a graphitization of a-C: H films and a reduction of the hydrogen content.
两者表明射频功率越高，射频自负偏压越高，离子能量越高，离子对膜的轰击作用增强，导致了薄膜石墨化和膜中H成分的减少。 - In a certain domain of discharge parameters, transitions and hysteresises have been observed in the curves of the tuned substrate self-bias versus the capacitance of the tuning capacitor.
在一定放电参数区域内，调谐基片射频自偏压随调谐电容的变化曲线呈现跳变、双稳、迟滞现象。 - In this paper, the reasons why the tuned substrate self-bias jumped discontinuously and was bistable are revealed, and the factors affect the characteristic are given.
论文通过实验结果分析了基片偏压产生双稳、跳变回滞现象的物理原因，给出了影响跳变回滞的因素。 - The traditional bandgap reference circuit was improved in the design, which includes the applying of self-bias structure and cascode structure, output of the opamp was used as self-bias voltage, saving bias circuit, and then it was helpful to get low power consumption.
对传统带隙基准电路进行了改进设计，采用自偏置结构和镜像电流镜结构，利用运放的输出电压作为运放的偏置电压，节省了偏置电路，降低了功耗； - Self-bias Induced Aligned Growth of Carbon Nanotubes
自偏压作用下纳米碳管的定向生长 - Deposited at high target self-bias voltage, the BST thin films are highly ( 100)-orientation, and have smooth surface, excellent crystallinity and good withstand voltage properties.
在较高自偏压下制备的BST薄膜具有高度的（100）择优取向，且结晶性好，表面平整，耐压能力强。 - Not long ago, a new phenomenon that there was bistate, jumped delay in tuned substrate self-bias was found for the first time in an experiment, and researched in detail.
在以前的实验中，首次发现了基片调谐偏压的跳变、双稳回滞现象，并且对此进行了详细的研究。 - Analysis and Design of a Self-bias Current CMOS Reference
一种自偏置电流CMOS基准源的分析与设计 - Influence of discharge parameters such as RF power and working pressure on the negative self-bias voltage of substrate was investigated by an oscilloscope with a high voltage probe.
采用高压探头示波器系统研究了射频辉光放电参数对自偏压的影响规律。 - The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。 - Influence of Negative Self-Bias on Microstructures and Properties of Diamond-Like-Carbon Films Deposited by RF Glow Discharge
射频辉光放电自偏压对类金刚石碳膜结构和性能的影响 - Our results reveal that high pyroelectric property of BST thin film could be achievable using inverted cylindrical RF sputtering with high target self-bias voltage.
研究结果表明，利用倒筒式射频溅射方法，适当提高自偏压，可以制备出热释电性能优良的BST薄膜。 - It cascades two stages with voltage negative feedback structure, and is only supported by a single power supply with a self-bias resistance, thus is convenient to use with good reliability and coherence.
电路设计采用了两级级联负反馈结构，并采用电阻自偏压技术，单电源供电，使用方便，可靠性高，一致性好。 - Experimental studies have been made on the characteristics of the tuned substrate self-bias by tuning the external capacitor, and relations of the tuned substrate self-bias with the RF discharge power and the argon gas pressure.
研究了调谐基片自偏压随外部调谐电容值的变化特征，得到了调谐基片射频自偏压随射频放电功率、气压的变化曲线。 - This paper describes a self-bias S-band MMIC broad-band LNA ( low noise amplifier) with high gain.
报道了具有高增益自偏结构的低噪声S波段MMIC宽带低噪声高增益放大器。 - Numerical Studies on Tuned Substrate Self-bias in a Radio-frequency Inductively Coupled Plasma
射频感性耦合等离子体中基片调谐自偏压的数值研究 - Negative Self-bias in RF Glow Discharge
射频辉光放电中的自生负偏压 - We also study the substrate self-bias jumped delay, double-steady delay and self-oscillation etc with the condition of copper belt discharge antennas, and compare with datum which are obtained with the condition of red copper tube discharge antennas.
研究了铜带放电天线下基片自偏压的跳变回滞、双稳回滞、自振荡等特性，并与多匝铜管放电天线下的结果进行了比较。 - The nonlinear change of sheath capacitance result in the nonlinear change of tuned substrate self-bias.
鞘层电容的非线性变化导致了基片偏压的非线性变化。 - Because of the basic feature of self-bias PLL, the ratio of loop bandwidth and reference clock can be kept to be a certain range so that both of the lock time and input tracking jitter can be improved.
因为自偏置锁相环的特点，使得所设计的锁相环的带宽与输入频率的比值可以保持在一个相对稳定的范围，对锁定时间以及输入频率跟踪抖动得到改善。 - The self-bias current source is selected to provide the base biascurrent of cascode gain structure. According to IB-NF curve in ADS simulation, the bias current is determined to achieve the lower noise figure.
选用自偏置电流源为cascode增益结构提供基极偏置电流，并根据ADS仿真出的基极电流IB与最小噪声系数NF的关系曲线，确定使NF较小的偏置电流。 - The common source circuit of the first stage adopts a self-bias circuit, and the second stage circuit adopts an adaptive biasing circuit.
电路第一级共源电路采用自偏置电路提供偏置，第二级采用自适应偏置电路提供偏置。 - The deposition rate is slightly increased when a low dc self-bias is applied, and reduced with the self-bias increasing due to strengthened ion bombardment.
小的直流自偏压会略微提高沉积速率；但随着直流自偏压的增强，离子轰击效应及刻蚀作用加强，薄膜的沉积速率下降。