silicide

1. Thermodynamic Study on CVD Tungsten Silicide System
   化学气相淀积硅化钨体系热力学研究
2. We have a production line of organic chloride, silicide, nitride compounds and etc.
   目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。
3. The precipitation of silicide may promote the intensity of slip and is the minor reason for the ductility loss.
   而硅化物析出协同促进位错滑移集中化，是热稳定性下降的次要因素。
4. In one embodiment, the metal nitride layer pattern is1/ 4 to1/ 2 as thick as the silicide.
   在一个实施例中，该金属氮化层图案的厚度是该硅化物的1/4至1/2。
5. The silicide components in cuticle of rice straw stem, leaf sheath and rice shaft were studied by means of XPS-peak-differentation-imitating analysis.
   用XPS测定结合分峰拟合分析，研究稻草茎部、叶鞘、穗轴等部位皮层中硅化物的组成。
6. Self-Assembled Manganese and Manganese Silicide Nanostructures on Si Restructured Surfaces
   锰及其硅化物纳米结构在硅重构表面上的自组装生长
7. Silicide in Ti-Si Eutectic Alloys and its Effect on Alloy Microhardness
   钛硅共晶合金中硅化物及其对显微硬度的影响
8. Effects of High Temperature Heat Treatments on the Microstructure of an Nb Silicide Based Ultrahigh Temperature Alloy
   高温热处理对Nb硅化物基超高温合金组织特征的影响
9. Microstructures and thermoelectric properties of higher manganese silicide prepared by rapid solidification and hot pressing
   快速凝固和热压高锰硅的微观结构和热电性能
10. Investigation of phase change and growth kinetics of titanium silicide on silicon
    硅上硅化钛相变和生长动力学研究
11. A double-layer polysilicon bipolar technology is presented. Deep-trench isolation and BF_2-implanted base layer, combined with rapid thermal annealing ( RTA), are used in the process for emitter diffusion and titanium silicide annealing.
    报道了一种使用深槽隔离和注入基区及快速热退火（RTA），同时为发射极扩散和Ti硅化物退火的双层多晶硅双极技术。
12. For comparison, the poly gate depletion effect ( PDE) of polysilicon gate and pure nickel silicide gate is investigated by quasi static C V. The effect of poly doping and gate oxide thickness on PDE is studied too.
    采用准静态CV方法研究了多晶硅栅和纯硅化镍栅的多晶栅耗尽效应（PDE），并探讨了硅化镍栅掺杂浓度和栅氧化层厚度对PDE的影响。
13. Ti silicide ohmic contact and Schottky contact can be obtained at the same time in VLSI process.
    在VLSI工艺中实现同时完成钛硅化物欧姆接触和肖特基势垒二极管（SBD）的制作。
14. Study of tungsten silicide formed by As ion implantation
    As离子注入形成硅化钨的研究
15. The solid state reaction of ultra-thin nickel film on both n+/ p and p+/ n junction substrates has been investigated in low temperature range. The film composition, structure and properties of the formed nickel silicide are characterized.
    论文系统研究了超薄Ni膜在重掺杂n+/p和p+/n浅结型硅衬底上、低温范围内Ni/Si固相反应规律，分析了硅化镍薄膜的组分、结构和特性的变化及其原因。
16. Microstructure and Wear Resistance of a Cr-Cu-Si Metal Silicide Alloy
    Cr-Cu-Si金属硅化物合金组织与耐磨性
17. In this paper, the titanium silicide films processed by PECVD method have been studied.
    本文研究了用PECVD法制备硅化钛膜的卫艺。
18. Heat-resistant alloy coating, aluminide coating, silicide coating and precious metal coating are four systems of high temperature oxidation resistant coating on Nb alloy surface.
    介绍了铌合金表面高温抗氧化涂层的4大体系&耐热合金涂层、铝化物涂层、硅化物涂层和贵金属涂层的组成、特点及制备条件。
19. The conditions of forming tungsten silicide with As ion beam mixing have been studied by means of Rutherford backscattering.
    本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。
20. This paper describes techniques research of microwave schottky silicide barrier diodes.
    对微波肖特基中、低势垒二极管硅化物的工艺技术进行了研究。
21. Theuse of multilayer film in imitation of codeposition can realize shallow silicide contacts.
    利用多层膜可模拟共淀积多元膜，实现硅化物的浅接触。
22. The silicide formation for Ni/ Pd bilayers on Si substrate is investigated.
    研究了Ni/Pd双层薄膜在硅衬底上的硅化物形成过程。
23. The depth profiles of the Si to Y ratio provide important information for the study of Y silicide.
    用掠角沟道和掠角背散射都能得到Y与硅原子比深度分布，这对于Y离子注入硅合成钇的硅化物种类提供了重要信息。
24. And by the means of silicide, resist layer and aluminium multilayer metal lines, the questions of ohmic-contact and A1 electron mobility are resolved.
    采用硅化物阻挡层和A1多层金属布线方法，解决了欧姆接触和铝的电迁移问题。
25. Research on the Microstructure and Mechanical Property of Metallic Silicide in Mo-Si System
    Mo-Si系金属硅化物组织与机械性能的研究
26. Study on Wear and High-Temperature Oxidation Properties of Laser Clad Metallic Silicide Composite Coatings on TiAl Intermetallic Alloy
    TiAl合金激光熔覆金属硅化物复合材料涂层耐磨性和高温氧化性能研究
27. The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
    硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
28. Phase change and growth kinetics of silicide of Ti thin film on silicon are investigated by means of RBS and X-ray diffraction.
    用RBS及X线衍射研究了硅上钛薄膜退火时形成硅化物的相变和生长动力学。
29. Silicide dopped with boron element has better oxidation resistance property due to the protective film of borosilicate glass.
    含B的硅化物由于形成保护性的硼硅玻璃而具有很好的抗氧化性。

noun

1. any of various compounds of silicon with a more electropositive element or radical