silicon-on-insulator
英 [ˈsɪlɪkən ɒn ˈɪnsjuleɪtə(r)]
美 [ˈsɪlɪkən ɑːn ˈɪnsəleɪtər]
网络 绝缘体上硅; 硅绝缘体; 绝缘衬底上的硅; 绝缘上覆硅; 覆硅
双语例句
- The combiner is fabricated on a silicon-on-insulator ( SOI) substrate.
在一个绝缘体上硅的基板上实现了该器件。 - Silicon-on-insulator ( SOI) technology holds great promise in the fabrication of high-temperature devices and circuits.
技术在高温器件和电路方面有着广泛的应用前景。 - Ultrafast Carrier Dynamics in Surface of Silicon-on-Insulator
绝缘衬底上硅表面载流子的超快动力学研究 - Corrugated High-order Bragg Grating on Silicon-on-insulator Ridge Waveguides Fabricated by Photolithography
高阶布拉格光栅在SOI脊形波导上的光刻制作 - The fabrication of Bragg gratings on silicon-on-insulator ( SOI) rib waveguides using electron-beam lithography is presented.
报道了一种用电子束曝光的方法在绝缘体上硅的脊状光波导上制做布拉格光栅的技术。 - Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method ( EIM) and two dimensional beam propagation method ( 2D-BPM).
采用有效折射率方法EIM（EffectiveIndexMethod）和二维束传播算法（2DBPM）对SOI（SilicononInsulator）波导弯曲损耗的改善方法进行了模拟分析。 - Study on Silicon-on-insulator Integrated Optical Waveguide Devices
SOI集成光波导器件的基础研究 - The fabrication process of a compact planar waveguide etched-grating ( EDG) demultiplexer based on silicon-on-insulator ( SOI) is studied.
研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺。 - Optical Waveguide Devices and Improvement of Their Sidewall Surface Roughness in Silicon-on-Insulator
SOI基集成光波导器件及表面粗糙度改善的研究 - An arrayed waveguide grating ( AWG) demultiplexer with total internal reflection ( TIR) mirrors is designed based on silicon-on-insulator ( SOI) material.
设计了一种基于绝缘体上的硅材料的全内反射型阵列波导光栅解复用器件。 - Design of a Compact Multimode Interference Optical Switch in Silicon-on-Insulator
紧缩型SOI多模干涉光开关的设计 - The technologies of WDM devices include thin film, fiber grating, hologram grating, arrayed-waveguide grating ( AWG), in which AWG is considered to be the most promising DWDM device. SOI ( Silicon-On-Insulator) is a kind of applicable material.
波分复用器件采用的技术从薄膜到光纤光栅、全息光栅、阵列波导光栅（AWG）等技术，其中AWG器件被认为是最有前景的DWDM器件。 - The formation process and multi-layer structures of various Silicon-on-Insulator ( SOI) materials formed by high dose ion implantation, high temperature annealing have been investigated.
本文报道了借助高剂量离子注入、高温退火等技术获得不同类型SOI（SilicononInsulator）材料的形成过程及其多层结构。 - Fabrication of Silicon-on-Insulator Structure with Si_3N_4 as Buried Insulating Films by Epitaxial Layer Transfer
多孔硅外延转移技术制备以氮化硅为绝缘埋层的SOI新结构 - Silicon-on-insulator ( SOI) device has the advantages of small junction capacitance, good resisting-radiation property, superior subthreshold characteristics, eliminating the latchup effects, suitable to low-voltage low-power operation, etc.
绝缘体上硅器件（SOI）具有结电容小、抗辐射性能好、优良的亚阈区特性、消除了闩锁效应、适于低压低功耗工作等优点，而被称为二十一世纪的硅集成电路技术。 - The fabrication of SOI ( Silicon-on-insulator) materials is introduced. The SOI MOSFET hot carrier degradation mechanism is discussed.
介绍了绝缘体上硅（SOI）材料的制作方法，阐述了SOIMOSFET器件的热载流子注入效应的失效机理。 - Design of 4 × 4 Area Modulation Silicon-on-insulator Multimode Interference Coupler Optical Switch
4×4区域调制多模干涉耦合器SOI光波导开关的设计 - Silicon-on-insulator ( abbreviated as SOI) optical waveguide is the base of silicon-based optical waveguide devices and other integrated optical devices.
SOI光波导是硅基光波导器件的基础，也是实现其它集成光学器件的基础。 - Degradation mechanism of silicon direct bonding/ silicon-on-insulator ( SDB/ SOI) bipolar devices is discussed.
对硅片直接键合/绝缘体上硅（SDB/SOI）双极电路的退化机理进行了描述。 - The lifetime of free carriers in a silicon-on-insulator ( SOI) rib waveguide, which is used for Raman amplification, is studied in connection with the nonlinear optical loss.
研究了用于喇曼放大的绝缘硅（SOI）脊形波导中自由载流子寿命与非线性光学损耗的关系。 - Progress in Research on Silicon-on-insulator Optical Waveguide Switch
SOI光波导开关研究进展 - Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides
SOI波导弯曲损耗改善方法的研究 - Partially-depleted silicon-on-insulator ( PDSOI) floating-body ( FB) nMOSFETs and H-gate type body-contacted ( BC) nMOSFETs are fabricated with different back channel implantation dosages.
分别采用不同的背栅沟道注入剂量制成了部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件。 - The Silicon-on-Insulator ( SOI) technology offers low leakage, low power consumption, high speed, low cross-talk and wider safe operating area. It has attracted a lot of attention for use in Power Integrated Circuits ( PICs).
SOI（SilicononInsulator）技术具有低泄漏电流、低功耗、高速、低串扰和宽安全工作区等优点而在功率集成电路（PowerIntegratedCircuits，PICs）应用中备受关注。 - Low-temperature wafer direct bonding with its low temperature, good bonding quality and fewer restrictions has been widely used in the fabrication of silicon-on-insulator ( SOI) and Micro-Electro-Mechanical-Systems ( MEMS) devices.
低温直接键合技术由于键合温度低，键合质量好，键合材料限制少等优点在绝缘体上硅（SOI）结构、微机电系统（MEMS）器件等领域得到广泛的应用。 - WLP ( Wafer Level Package), 3-D Chip Stacking and SOI ( Silicon-on-insulator) are the three impetuses for the development of wafer bonding technology.
晶圆级封装、三维芯片堆叠和绝缘体上硅技术是推动晶圆键合技术发展的三大动力。 - In recent years, silicon-on-insulator ( SOI) optical waveguides with larger refractive index contrast between silicon core and insulator cladding has attracted much attention because it is considered as an ideal platform for optoelectronics integration, in which both theoretical and experimental investigations become booming nowadays.
近年来，芯层与绝缘层有较大折射率差的SOI光学波导作为光电集成的一种理想平台已引起业界关注，并对其理论和实验的研究也日趋繁荣。 - A novel integration of long wavelength photodetectors on Silicon-on-Insulator racetrack resonator was designed.
设计了一种基于SOI跑道谐振腔滤波的具有波长选择性能的长波长集成光探测器。 - Silicon-On-Insulator ( SOI) lateral high voltage devices are the key devices in SOI High Voltage Integrated Circuit ( HVIC). However, the low vertical breakdown voltage of SOI devices limits the application in high voltage and power integrated circuit.
作为SOI（SilicononInsulator）高压集成电路的核心器件，SOI横向高压器件较低的纵向击穿电压限制了其在高压功率集成电路中的应用。 - With the development of fabrication technology of silicon waveguide based on the SOI ( silicon-on-insulator) structure, it becomes possible to integrate the electrical and optical devices on a single silicon chip.
随着基于SOI（silicon-on-insulator）结构的硅波导制作工艺的发展，在同一硅片上集成各种电子和光子器件成为可能。