FET

abbr.  远东时间(Far East Time); 快速傅里叶变换; 联邦特许权税(Federal Excise Tax)

复数:fets

计算机



双语例句

  1. CAD of Low-Noise Microwave FET Amplifier
    低噪声微波场效应管放大器的计算机辅助设计
  2. The result shows that the use of FET transistor can improve the speed being controlled by the electric machining, and the feeding accuracy as well.
    阐述大功率场效应管的性能,进而论述了其在电火花加工装置中的应用问题,结果表明,使用这种效应管可以提高电加工的控制速度和进给精度。
  3. Aiming at the shortcoming of the typical field-effect transistor ( FET) switch, this paper proposes a kind of novel FET switch.
    针对典型场效应管开关电路的缺点,提出了一种新的场效应管开关。
  4. GaAs dual-gate FET and application in microwave circuits
    砷化镓双栅场效应管及其在微波电路中的应用
  5. The Unequiripple Function Type Impedance Matching Network for Microwave Transistor or FET Chip
    微波晶体管、场效应管管芯的不等波纹函数型阻抗匹配网络
  6. Capacitor coupled fet logic
    电容耦合式场效应晶体管逻辑
  7. The regulator for a tokamak vertical field feedback control system using a group of FET parallel
    场效应管并联作为托卡马克垂直场反馈系统调节器的研究
  8. Vertical channel fet Cut tube end square. Ream, burr and size.
    垂直沟道场效应晶体管垂直切割管道。刮除毛刺,测量尺寸。
  9. Synthesis of Hydrogen Peroxide from H_2/ O_2 Plasma with Multiple Parallel Discharge Tubes and Its Application in Propene Epoxidation; A GaAs FET Oscillator stabilized by a dielectric resonator with a feedback loop has been developed.
    多管并联等离子体反应器氢氧合成过氧化氢及其用于丙烯催化环氧化反应的研究本文介绍了一种环路反馈式场效应管介质稳频振荡器。
  10. Development of Trench MOSFET short channel fet
    沟槽型MOSFET的发展(英文)短沟道场效应晶体管
  11. In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET.
    本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法。
  12. Effect of External Electric Field on Lateral Crystallization of a-Si Induced by Some Metals charge coupled fet
    外加电场对金属诱导非晶硅横向结晶的影响电荷耦合场效应晶体管结构
  13. VLF Field Strength Calculation Methods Based on Waveguide Mode CAD of Low-Noise Microwave FET Amplifier
    基于波导模式的甚低频场强计算方法低噪声微波场效应管放大器的计算机辅助设计
  14. Enhancement mode fet integrated circuit Superconductivity And Its Pressure Enhance Effect of Tl Single Crystal
    增强型场效应晶体管集成电路铊系单晶的超导电性及压力增强效应
  15. Enhancement type schottky barrier fet
    增强型肖特基势垒场效应晶体管
  16. Vertical channel fet piped medical gas supply system
    垂直沟道场效应晶体管管道医用气体供应系统
  17. FET multiplier filter multiplier and amplifier integrated modular waveguide to microstrip transition.
    标签FET倍频器滤波器倍频放大组件微带到波导过渡。
  18. A third-order intermodulation distortion ( IMD3) sinker composed of a PMOS FET and a tuned inductor is proposed for linearization of CMOS cascode LNA in this paper.
    该文提出了一种由调谐电感和PMOS管构成的3阶互调失真吸收单元来提高线性度。
  19. Polysilicon fet Anisotropic Etching Simulation of Crystalline Silicon Based on Crystal Lattice
    多晶硅场效应晶体管基于晶格结构的单晶硅异向腐蚀的计算机模拟
  20. In this paper, the current state and technology of diamond devices are discussed. The diamond bipolar devices and the diamond FET are described. Study on Secondary Electron Emission Performance of B-doped Diamond Films
    介绍了金刚石器件的发展现状与技术,对金刚石双极器件和金刚石场效应管进行了分析。掺硼金刚石薄膜二次电子发射特性的研究
  21. Working Process Analysis of the SCR-Power MOS FET Chopper
    晶闸管&功率场效应管斩波器工作过程分析
  22. The students can use BJT and FET appropriately when they understand their characteristic.
    认识三端元件的特性之后,未来能正确的使用这个元件。
  23. Self aligned schottky fet
    自对准肖特基栅场效应晶体管
  24. The Design of a DAQ System for a GEM Imaging Detector Based on FET Array Readout
    基于FET开关阵列的GEM成像探测器电子学系统设计
  25. Research on the SVM based Large-Signal Modeling Method of Microwave Power FET
    基于支持向量机的微波功率FET大信号建模方法的研究
  26. Furthermore, the oscillator should use discrete bipolar and FET devices in the circuits recommended by the crystal manufacturers.
    此外,振荡器应该使用被晶体生产厂商建议的分立的双极型场效应晶体管输出。
  27. This FET transistor, used here as variable resistor it's part of reaction circuit of IC2.
    这FET晶体管,这里用作可变电阻的电路IC2的反应的一部分。
  28. Enhancement depletion mos depletion metal schottky fet
    增强型耗尽型模式金属氧化物半导体耗尽型肖特基场效应晶体管
  29. Bipolar fet integrated circuit Development and Test Results of Dual Compensation Chamber Loop Heat Pipe
    双极场效应晶体管集成电路双储液器环路热管的设计与实验研究
  30. This technique may be extended to the use of FET's or other devices to meet special resistance or environment requirements.
    这个方法也可以推广到FET对管或者其他需要性能匹配的场合,满足电阻或者环境方面的特殊要求。