op-amps
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(op-amp 的复数) [医]运算放大器
op-amp 的复数
双语例句
- Current Feed-Back Operational Amplifiers ── A New Technology for High-Speed Op-amps
高速运算放大器新技术&电流反馈运算放大器 - Four independent op-amps with the lowest input noise& excellent audio performance are used in the gain stages, two for each channel giving you three independent gains per channel.
四个独立的运算与最低的输入噪声和出色的音频性能放大器增益级中使用，每个给你的三个通道，每通道独立增益两个。 - In this paper, a nonlinear macromodel for all types of Integrated Circuit Operational Amplifiers ( IC Op-Amps) is developed through studying the characteristics of all types of IC OP-Amps.
文中通过对各类型集成运算放大器的特性的研究，建立了一种适合于各类型集成运放的时域特性分析的非线性宏模型。 - A More Popular Nonlinear Macromodel for IC Op-Amps
一种更加通用的集成运放非线性宏模型 - Analyses of the CMOS op-amps 'damage in irradiation environment
CMOS运算放大器电路的辐照损伤分析 - In the development of the model, we do our best to preserve the topological structures and working principles of corresponding original circuits, and further, the element parameters in the model can be derived simply from the values of typical terminal characteristics of IC Op-Amps.
在模型的建立过程中，注重了尽量保持原始运放的拓朴结构及工作机理的不变性，而且使得宏模型中的各元件参数均可简单地由运放的外部端口特性求出。 - The Fabrication Technique of JFET Differential Pair in Op-Amps And Its Prospect
运算放大器中JFET对管的制作技术及其发展前景 - It is studied how to realize floating measurements by utilizing op-amps and RC elements in this paper.
本文研究了如何利用运算放大器和RC元件实现浮地测量，提出了一种新型的高精度浮地测量方法。 - This paper describes a method of designing active networks by using nullor equivalents as models for op-amps and bipolar transistor circuits.
本文应用零极子等效为运放及双极性晶体管电路的模型，阐述有源网络的设计方法及其应用。 - According to ideal op-amp's characteristics and nodal system of equations, a simulation scheme of the circuit containing ideal op-amps based on PSpice is proposed. The approach to modeling and writing input netlist file is elaborated in detail.
据理想运算放大器的控制特性和节点分析法，提出含理想运算放大器电路的PSpice仿真方案，详细说明了仿真模型和输入网单文件的建立方法。 - By combining JFETs with bipolar devices, op-amps with high speed, wide-band and high input impedance can be obtained.
JFET与双极器件相结合，可以获得高速/宽带/高输入阻抗的运算放大器。 - It was shown that by lessening the thickness of gate oxide layer properly, degradation of transconductance of the op-amps 'transistors induced by radiation-generated oxide charges and interface states can be reduced, therefore, the ability of CMOS amp to resist radiation can be improved.
结果显示，适当地减薄栅氧层厚度，可相应地减少辐照感生氧化物电荷和界面态引起的跨导衰降，从而使CMOS运放电路的抗辐射特性得到明显的改善。